A circuit is provided that includes a strain gauge resistor having a center axis and multiple conductor layer segments and a trim region extending along the center axis; wherein a first portion of the strain gauge resistor is located on one side of the center axis and a second portion of the strain gauge resistor is located on an opposite side of the center axis.

A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250° C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. Blending the dielectric material with the carbon-based ink causes the modified carbon-based ink to have a resistivity that is at least double a resistivity of the carbon-based ink.

A calibration system adapted to calibrate a resistance of an electrical device having a lead wire comprises a resistance detector adapted to detect the resistance of the electrical device, a first container containing an etching solution adapted to etch the lead wire, and a heater configured to heat the electrical device. If a first resistance of the electrical device detected by the resistance detector at a first temperature is within a first predetermined range, the electrical device is heated with the heater to a second temperature higher than the first temperature. A second resistance of the electrical device is detected by the resistance detector at the second temperature. If the second resistance is beyond a second predetermined range, the lead wire is etched by the etching solution to adjust the resistance of the electrical device until the second resistance at the second temperature is within the second predetermined range.

A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250 C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. Blending the dielectric material with the carbon-based ink causes the modified carbon-based ink to have a resistivity that is at least double a resistivity of the carbon-based ink.

A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250 C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. An amount of the dielectric material blended with the carbon-based ink does not exceed about 15% by weight of the modified carbon-based ink. The modified carbon-based ink has a resistivity that is at least double a resistivity of the carbon-based ink. The thick film resistor may be configured to handle up to about 200 mA of current without fusing and/or handle up to about 1.0 W of power without fusing.

A calibration system adapted to calibrate a resistance of an electrical device having a lead wire comprises a resistance detector adapted to detect the resistance of the electrical device, a first container containing an etching solution adapted to etch the lead wire, and a heater configured to heat the electrical device. If a first resistance of the electrical device detected by the resistance detector at a first temperature is within a first predetermined range, the electrical device is heated with the heater to a second temperature higher than the first temperature. A second resistance of the electrical device is detected by the resistance detector at the second temperature. If the second resistance is beyond a second predetermined range, the lead wire is etched by the etching solution to adjust the resistance of the electrical device until the second resistance at the second temperature is within the second predetermined range.

A plasma etching method is performed by forming a desired pattern of a mask into a film including a zirconium oxide film by plasma etching with plasma generated from a first gas. The first gas consists of at least one chloride-containing gas of the group of boron trichloride, tetrachloromethane, chloride and silicon tetrachloride, at least one hydrogen-containing gas of the group of hydrogen bromide, hydrogen and methane, and a noble gas. An underlying film of a silicon oxide film or an amorphous carbon film is provided underneath the zirconium oxide film, and an etching selectivity of the zirconium oxide film to the underlying film is greater than or equal to one.

An electronic device including a thermistor and a bias reference resistor in a voltage divider configuration integrated into a single die and a method of fabricating the same. In an example, the electronic device comprises a substrate including an n-well region, a thermistor formed in the n-well region, and a bias resistor connected in series to the thermistor, the bias resistor formed in a region of the substrate isolated from the n-well region.

Resistors and method of forming the same are provided. A device structure according to the present disclosure includes a substrate, a first intermetal dielectric (IMD) layer over the substrate, a resistor that includes a first resistor layer over the first IMD layer, a second resistor layer over the first resistor layer, and a third resistor layer over the second resistor layer, a second IMD layer over the first IMD layer and the resistor, a first contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer, and a second contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer.