A resistor is provided with a resistance body and a pair of electrodes connected to the resistance body (a first electrode body, a second electrode body), the resistance body being arranged so as to be at least separated away from a substrate board (a circuit board) when mounted on the substrate board (the circuit board), wherein the resistor has the oxide film on at least one of the resistance body and each of the electrodes (the first electrode body, the second electrode body) at a boundary portion (a bonded portion, a bonded portion) between the resistance body and each of the electrodes (the first electrode body, the second electrode body) on the mounting surface of the resistor.

A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L.sub.0 of a length L of an observed peeled portion to a length L.sub.0 of the bonding interface in an observation field is 0.16 or less.

Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

A thermistor-based thermal probe includes a thermistor die having a thermistor thereon with first and second bond pads coupled across the thermistor, and first and second die interconnects coupled to the respective bond pads. First and second wires W1, W2 that extend beyond the thermistor die are attached to the first and to the second die interconnects, respectively. An encapsulant material encapsulates the thermistor die and a die end of the first and second wires.

A chip component comprises: an insulating substrate on which a resistor serving as a functional element is formed; a pair of internal electrodes (front electrodes, end surface electrodes, and back electrodes) that is formed to cover both end portions of the insulating substrate and connected to the resistor; a barrier layer that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer that is formed on a surface of the barrier layer and mainly composed of tin, and the barrier layer is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content ratio of phosphorus relative to nickel is set in a range of 0.5% to 5% so that the barrier layer has magnetism.

An electronic component manufacturing method includes a blotting process of bringing a conductive paste applied to an end portion of each electronic component body held by a jig into contact with a surface of a surface plate. The blotting process includes simultaneous performance of a distance changing process of changing the distance between an end face of each electronic component body and the surface of the surface plate and a position changing process of changing a two-dimensional position where the end face of the electronic component body is projected on the surface of the surface plate in such a manner that the direction of the movement of two-dimensional position in parallel to the surface of the surface plate successively varies (e.g., along a circular path).

A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO.sub.2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.

A chip ceramic semiconductor electronic component includes a ceramic body including a ceramic semiconductor, and a first surface and a second surface in contact with the first surface, the first outer electrode on the first surface of the ceramic body, and the second outer electrode covering the first outer electrode and extending onto the second surface of the ceramic body, in which an area of a first surface of the first outer electrode is less than about 0.17 mm.sup.2, and a hard particle made of a material harder than the first outer electrode is at the interface between the first and second outer electrodes.

A method for fabricating a micro resistance layer and a method for fabricating a micro resistor are provided. The method for fabricating a micro resistance layer includes: providing a substrate; forming a first resistance layer on the substrate by using a screen printing process or a sputtering process; dividing the first resistance layer into second resistance layers, wherein each one of the product regions includes a second resistance layer, and an area of each one of the product regions is smaller than 0.4*0.2 mm.sup.2; and trimming the second resistance layer of each one of the product regions according to a predetermined resistance value to enable the pattern of each one of the second resistance layers to correspond to the predetermined resistance value. The method for fabricating a micro resistor uses the method for fabricating a micro resistance layer for fabrication of the micro resistor.

A sintered body has a first end face and a second end face opposite to each other in a first direction and a first side face and a second side face opposite to each other in a second direction. A first end face electrode is disposed on the first end face except for end portions of the first end face in the second direction. A second end face electrode is disposed on the second end face except for end portions of the second end face in the second direction. A first side face electrode is disposed on the first side face except for end portions of the first side face in the first direction. A second side face electrode is disposed on the second side face except for end portions of the second side face in the first direction.