In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si.sup.4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al.sup.3+, B.sup.3+, or Ba.sup.2+, wherein a corresponds to a molar proportion of Bi calculated as Bi.sub.2O.sub.3, b corresponds to a molar proportion of Y calculated as Y.sub.2O.sub.3, c corresponds to a molar proportion of Al calculated as Al.sub.2O.sub.3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B.sub.2O.sub.3, f corresponds to a molar proportion of Si calculated as SiO.sub.2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co.sub.3O.sub.4, i corresponds to a molar proportion of Cr calculated as Cr.sub.2O.sub.3, j corresponds to a molar proportion of Sb calculated as Sb.sub.2O.sub.3, and k corresponds to a molar proportion of Mn calculated as Mn.sub.3O.sub.4.

Disclosed are various pallet assemblies for arc spray applications. In some embodiments, an assembly may include a top frame comprising a plurality of recesses each operable to receive an electronic device, and a bottom frame coupled to the top frame, wherein the bottom frame comprises a plurality of support structures, and wherein each support structure of the plurality of support structures is aligned with a corresponding recess of the plurality of recesses. The assembly may further include a mechanical device coupled to the top frame and the bottom frame, wherein the mechanical device is operable to bias the top frame and the bottom frame relative to one another.

A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.

A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.

A method of making a heater includes an aluminum nitride base having equal to or less than 1% impurities, particularly one embodiment having none of polybrominated biphenyl, polybrominated diphenyl ether, hexabromocyclododecane, polyvinyl chloride, chlorinated paraffin, phthalate, cadmium, hexavalent chromium, lead, and mercury. The base is fired in a heating unit before any layering. Thereafter, on a topside and backside of the base a conductor layer is layered and allowed to settle and dry before firing. Next, a resistive layer is layered on the base from a resistor paste such that the resistive layer connects to the conductor layer on the topside. The resistor paste is allowed to settle and dry and then the base with the conductor and resistor layers is fired. At least four layers of glass are layered next over the resistive layer, each instance thereof including layering a glass, drying the glass and firing.

A method of making a heater includes an aluminum nitride base having equal to or less than 1% impurities, particularly one embodiment having none of polybrominated biphenyl, polybrominated diphenyl ether, hexabromocyclododecane, polyvinyl chloride, chlorinated paraffin, phthalate, cadmium, hexavalent chromium, lead, and mercury. The base is fired in a heating unit before any layering. Thereafter, on a topside and backside of the base a conductor layer is layered and allowed to settle and dry before firing. Next, a resistive layer is layered on the base from a resistor paste such that the resistive layer connects to the conductor layer on the topside. The resistor paste is allowed to settle and dry and then the base with the conductor and resistor layers is fired. At least four layers of glass are layered next over the resistive layer, each instance thereof including layering a glass, drying the glass and firing.

A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.

A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.

A passive two-terminal circuit element may include a resistor including a carbon-metal composite resistive element. The resistive element is configured to maintain a resistivity that fluctuates less than one tenth of an ohm per ten degree temperature change up to 400 degrees Celsius.

A passive two-terminal circuit element may include a resistor including a carbon-metal composite resistive element. The resistive element is configured to maintain a resistivity that fluctuates less than one tenth of an ohm per ten degree temperature change up to 400 degrees Celsius.