A semiconductor resistance device includes a polysilicon resistance region; a first contact region in the resistance region, the first contact region having the same conductivity type as the resistance region and having a higher impurity concentration than the resistance region; a first wiring electrically connected to one end of the resistance region via a plurality of first vias; and a second wiring electrically connected to the other end of the resistance region via a plurality of second vias. At least one of the plurality of first vias and the plurality of second vias is in contact with the first contact region so as to form a low resistance contact structure, and at least another one of the plurality of first vias and the plurality of second vias forms a high resistance contact structure that has a contact resistance higher than a contact resistance of the low resistance contact structure.

A method for manufacturing a composite material, a sensor element or an active component of a sensor element. The sensor element is applied in a field device of automation technology. At least two materials with different physical and chemical properties are predetermined depending on a functionality of the sensor element or the active component of the sensor element. An outer shape, into which the at least two materials should be formed, is predetermined. The outer shape is divided into a plurality of virtual spatial regions, wherein in each virtual spatial region the material distribution of the at least two materials occurs homogeneously and periodically according to predetermined rules corresponding to a microstructure. The predetermined rules are ascertained via a computer supported method depending on the predetermined functionality of the sensor element or the active component of the sensor element, wherein digital data, which describe the ascertained distribution of the at least two materials, are transferred to at least one 3D printer. As a printed product the sensor element or the active component of the sensor element is created by the 3D printer based on the digital data.

A semiconductor ceramic composition which is a BaTiO.sub.3 based semiconductor ceramic composition, wherein, part of Ba is replaced by at least A (at least one alkali metal element selected from Na and K), Bi and RE (at least one element selected from rare earth elements including Y), and part of Ti is replaced by at least TM (at least one element selected from the group including of V, Nb and Ta), the relationships of 0.7≦{(the content of Bi)/(the content of A)}≦1.43, 0.017≦{(the content of Bi)+(the content of A)}≦0.25, and 0<{(the content of RE)+(the content of TM)}≦0.01 are satisfied when the total content of Ti and TM is set as 1 mol, the grain sizes have a maximum peak in a grain size distribution in a range of 1.1 μm to 4.0 μm or less, and the distribution frequency of the peak is 20% or more.

There is provided a temperature sensor element including a pair of electrodes and a temperature-sensitive film disposed in contact with the pair of electrodes, in which the temperature-sensitive film includes a matrix resin and a plurality of conductive domains contained in the matrix resin, the conductive domains include a conjugated polymer and a dopant, and the number of structural units constituting the conjugated polymer is 65 or less.

The invention relates to a method for manufacturing a sensor element or an active component of a sensor element. The sensor element is applied in a field device of automation technology. The method comprises the following method steps: predetermining at least two materials with different physical and chemical properties depending on a functionality of the sensor element or the active component of the sensor element; predetermining an outer shape, into which the at least two materials should be formed, the outer shape being divided into a plurality of virtual spatial regions, wherein in each virtual spatial region the material distribution of the at least two materials occurs homogeneously and periodically according to predetermined rules corresponding to a microstructure. The method also includes steps of ascertaining the predetermined rules via a computer supported method depending on the predetermined functionality of the sensor element or the active component of the sensor element.

In an embodiment an electrical component includes an electrical resistor having a PTC ceramic with a reference temperature exceeding 150° C., wherein, at the reference temperature, a reference resistance is twice an amount of a minimum resistance of the PTC ceramic.

A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

An over-current protection device is a hexahedron comprising an upper surface, a lower surface and four lateral surfaces. The over-current protection device comprises a PTC device, a first insulating layer, a first electrode layer and a second electrode layer. The PTC device comprises a first conductive layer, a second conductive layer and a PTC material layer laminated therebetween. The first conductive layer comprises a first conductive section and a second conductive section separated by at least one trench. The first insulating layer is disposed on the first conductive layer. The first electrode layer is disposed on the first insulating layer and electrically coupled to the first conductive section. The second electrode layer is disposed on the first insulating layer and electrically coupled to the second conductive section. The trench comprises a primary portion not parallel to a longitudinal direction of the first and second electrode layers.

A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.