Patent classifications
H01C7/043
Thermistor element and electromagnetic wave sensor
A thermistor element includes: a thermistor film; a first electrode provided in contact with one surface of the thermistor film; and a pair of second electrodes provided in contact with an other surface of the thermistor film, wherein the thermistor film is provided to cover a periphery of the first electrode.
Ceramic member and electronic device
A ceramic member includes a matrix phase of a perovskite compound including La, Ca, and Mn, and a heterophase including Mn and O as main components, wherein crystal grains of the perovskite compound have an average grain size of about 2.5 μm or more and about 6.4 μm or less.
TEMPERATURE SENSOR ELEMENT AND METHOD FOR MANUFACTURING TEMPERATURE SENSOR ELEMENT
A temperature sensor element includes: an element main body including a heat sensitive body including a thermistor sintered body of which the electrical characteristics change with temperature, and a pair of lead wires that is connected to the heat sensitive body through electrodes; and a protective layer that protects the heat sensitive body. The protective layer has an inner protective layer covering the heat sensitive body and an outer protective layer covering the outer side of the inner protective layer. The inner protective layer is formed of an aggregate of particles that are chemically stable with respect to the thermistor sintered body and made of non-metal.
Electronic component for limiting the inrush current
An electronic component is disclosed. In an embodiment, an electronic component includes at least one NTC element and at least two electrically conductive contact elements, wherein the NTC element is electrically conductively connected to a respective contact element via a connection material, and wherein a coefficient of thermal expansion of the contact elements is adapted to a coefficient thermal expansion of the NTC element.
Preparation method and application of Yb3+-doped high temperature thermistor materials
A thermistor material composed of Ca.sub.1-xYb.sub.xCeNbWO.sub.8(0≤x≤0.2) can be used in a wide temperature range from 25 to 800° C. It is made from high-pure CaCO.sub.3, CeO.sub.2, NbO.sub.5, WO.sub.3 and Yb.sub.2O.sub.3. These ceramic materials with a scheelite structure can be obtained after mixing, grinding, calcination, pressing, cold isostatic pressing and high-temperature sintering, etc. The values of material constant B.sub.300° C./600° C. and ρ.sub.25° C. of thermistor materials are in the range of 6465K-6732K, 4.06×10.sup.7Ω.cm-8.63×10.sup.7Ω.cm. The thermistor material has a good thermostability and significant negative temperature coefficient (NTC) characteristic in the temperature range of 25° C. to 800° C., could be used as a potential for fabricating high-temperature thermistor sensors.
NTC Compound, Thermistor and Method for Producing the Thermistor
An NTC compound, a thermistor and a method for producing a thermistor are disclosed. In an embodiment an NTC compound includes a ceramic material of a Mn—Ni—O system as a main constituent, wherein the Mn—Ni—O system has a general composition Ni.sub.xMn.sub.2O.sub.4-δ, wherein y corresponds to a molar fraction of Ni of a total metal content of the ceramic material of the Mn—Ni—O system, which is defined as c(Ni):(c(Ni)+c(Mn)), and wherein the following applies: 0.500<x<0.610 and 0.197<y<0.240.
COMPOSITE, AND STRUCTURE AND THERMISTOR USING THE SAME
A composite that includes multiple first metal oxide particles containing at least one metal element that is at least one of Mn or Ni, and a first amorphous phase between the multiple first metal oxide particles and which contains the at least one first metal element.
PREPARATION AND APPLICATION OF A LOW-B HIGH-RESISTANCE HIGH-TEMPERATURE THERMISTOR MATERIAL WITH WIDE TEMPERATURE RANGE
An object of the present disclosure is to provide the preparation and application of a low-B high-resistance high-temperature thermistor material with wide temperature range. The thermistor material uses CaCO.sub.3, Y.sub.2O.sub.3, Nb.sub.2O.sub.5, CeO.sub.2 and MoO.sub.3 as raw materials. The Ca.sub.1-yY.sub.yMoO.sub.4-xCeNbO.sub.4 (1≤x≤3, 0.01≤y≤0.2) high-temperature thermistor material having low-B high-resistance and wide temperature region is obtained by mixing grinding, calcination, cold isostatic pressing, high-temperature sintering and coating electrode. The material constant B.sub.200° C./600° C. is 1800 K-4000 K, and the resistivity at 25° C. is 8.0×10.sup.5 Ω.Math.cm-6.0×10.sup.7 Ω.Math.cm. The low-B high-resistance wide temperature range high-temperature thermistor material prepared by the disclosure has stable performance and good consistency. The thermistor material has obvious negative temperature coefficient characteristics in the range of 25° C.-1000° C. and is suitable for manufacturing wide temperature range high-temperature thermistor.
Sensor Element of a Resistance Thermometer and Substrate for a Sensor Element
A sensor element of a resistance thermometer includes a substrate having a first layer including lanthanum aluminate and an electrically conducting measuring structure directly arranged on the first layer. The measuring structure includes platinum.
Ceramic material, component, and method for producing the component
A ceramic material, a component, and a method for producing a component are disclosed. In an embodiment a ceramic material includes a structure based on a system selected from the group consisting of NiCoMnO, NiMnO and CoMnO, and at least one dopant selected from lanthanides, wherein the ceramic material has a negative temperature coefficient of an electrical resistance.