A surge suppressor, comprising a Metal Oxide Varistor, MOV, connected to a current-conductive track and arranged for suppressing surges present on said current-conductive track, a temperature dependent component thermally coupled to said current-conductive track, wherein an electrical parameter of said temperature dependent component is dependent on temperature, control means arranged for providing a quantitative measure of a lifespan of said MOV based on fluctuations of said electrical parameter over time.

An electronic component in which a metal layer is unlikely to be peeled from a substrate includes an insulating ceramic substrate, a ceramic layer diffusion-bonded to the substrate, a metal layer including a first principal surface and a second principal surface opposed to the first principal surface, with the first principal surface diffusion-bonded to the ceramic layer, and a characteristic layer diffusion-bonded to the second principal surface of the metal layer and prepared from a ceramic material, wherein the characteristic layer varies in resistance value with respect to ambient temperature or applied voltage.

The present invention provides a ring varistor for use in DC micromotor including a ring varistor substrate having nonlinear volt-ampere characteristics and at least three independent electrodes evenly sintered on an end face of the ring varistor substrate. The electrode gap between two adjacent electrodes consists of two straight parallel edges of the two adjacent electrodes, and an inner and an outer concentric arc on the substrate ring, the electrode gap is not orthogonal to the ring. Due to the asymmetry arrangement of the surface electrodes and the electrode gaps, the electrode materials and the substrate materials with different thermal conductivity have no contact cross distribution with each other at the radial electrode gap. During welding, the heat shock is transmitted asymmetrically through the asymmetric electrodes, to improve the uniformity of the heat conduction distribution of the varistor and reduce the defective rate of the substrate welding fracture.

A varistor type multi-directional input device, including an upper cover, a base, a rocker assembly, a reset assembly, an electrical component, a switch elastic piece and a terminal assembly. The conductive elastic piece of the electrical component is mounted in a cavity surrounded by the upper cover, the base and the varistor. The rocking bar is operated to swing the eccentric wheel of the upper rocker arm or the lower rocker arm, and the surface pressure of the varistor is different due to the different deformation of elastic piece caused by the change of the height of the eccentric wheel in the axial direction, so that the varistor outputs different resistance values to achieve control of the screen cursor. The present disclosure is provided with a rocker arm seat which is matched with the upper rocker arm and the lower rocker arm.

In an aspect, a circuit can include drain and source terminals; a HEMT having a drain and a source, wherein the drain is coupled to the drain terminal; and a variable resistor having a first electrode and a second electrode. The first electrode can be coupled to the source of the HEMT, and the second electrode can be coupled to the source terminal. In another aspect, an electronic device can include a source terminal; a heterojunction between a channel layer and a barrier layer; a source electrode of a HEMT overlying the channel layer; a first resistor electrode overlying the channel layer and spaced apart from the source electrode, wherein the first resistor electrode is coupled to the source terminal; and a variable resistor, wherein from a top view, the variable resistor is disposed along the heterojunction between the source electrode and the first resistor electrode.

In an aspect, a circuit can include drain and source terminals; a HEMT having a drain and a source, wherein the drain is coupled to the drain terminal; and a variable resistor having a first electrode and a second electrode. The first electrode can be coupled to the source of the HEMT, and the second electrode can be coupled to the source terminal. In another aspect, an electronic device can include a source terminal; a heterojunction between a channel layer and a barrier layer; a source electrode of a HEMT overlying the channel layer; a first resistor electrode overlying the channel layer and spaced apart from the source electrode, wherein the first resistor electrode is coupled to the source terminal; and a variable resistor, wherein from a top view, the variable resistor is disposed along the heterojunction between the source electrode and the first resistor electrode.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A resistor comprises a substrate, an upper ohmic region disposed on a selective one of an upper surface and a lower surface of the substrate and a lower ohmic region disposed on the other one of the upper surface and the lower surface of the substrate. An upper metal conducting layer overlies on the substrate and the upper ohmic region, and a lower metal conducting layer overlies on the lower ohmic region. When the upper and lower metal conducting layers are electrified, the upper ohmic region and the lower ohmic region are electrically connected, and a contact interface between the substrate and the upper metal conducting layer forms an enlarged depletion region to block electrical conduction therebetween. As a result, a resistance value of the resistor is increased when an applied voltage on the resistor is increased.

A resistor comprises a substrate, an upper ohmic region disposed on a selective one of an upper surface and a lower surface of the substrate and a lower ohmic region disposed on the other one of the upper surface and the lower surface of the substrate. An upper metal conducting layer overlies on the substrate and the upper ohmic region, and a lower metal conducting layer overlies on the lower ohmic region. When the upper and lower metal conducting layers are electrified, the upper ohmic region and the lower ohmic region are electrically connected, and a contact interface between the substrate and the upper metal conducting layer forms an enlarged depletion region to block electrical conduction therebetween. As a result, a resistance value of the resistor is increased when an applied voltage on the resistor is increased.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.