The invention is to provide a chip resistor suitable for lowering an initial resistance value. A chip resistor 1 according to the present invention is provided with: an insulating substrate 2; a pair of front electrodes 3 which are provided on a front surface of the insulating substrate 2 so as to face each other with a predetermined interval therebetween; a resistive element 4 which is provided so as to bridge the front electrodes 3; a pair of auxiliary electrodes 5 which are provided so as to cover the front electrodes 3 and overlap end portions of the resistive element 4; and the like. The chip resistor 1 is configured such that: the front electrodes 3 are formed of a material which contains 1 to 5 wt % Pd and the balance Ag; and the auxiliary electrodes 5 are formed of a material which contains 15 to 30 wt % Pd and a metal material (e.g. Au) lower in resistivity than Pd and the balance Ag.

The invention is to provide a chip resistor suitable for lowering an initial resistance value. A chip resistor 1 according to the present invention is provided with: an insulating substrate 2; a pair of front electrodes 3 which are provided on a front surface of the insulating substrate 2 so as to face each other with a predetermined interval therebetween; a resistive element 4 which is provided so as to bridge the front electrodes 3; a pair of auxiliary electrodes 5 which are provided so as to cover the front electrodes 3 and overlap end portions of the resistive element 4; and the like. The chip resistor 1 is configured such that: the front electrodes 3 are formed of a material which contains 1 to 5 wt % Pd and the balance Ag; and the auxiliary electrodes 5 are formed of a material which contains 15 to 30 wt % Pd and a metal material (e.g. Au) lower in resistivity than Pd and the balance Ag.

In certain embodiments, a method comprises ablating, by a laser set to a first power level, a first area of a polyimide base substrate and forming, by ablating the first area of the polyimide base substrate, a first carbonaceous material film comprising a first specific resistive value. The method further comprises ablating, by the laser set to a second power level, a second area of the polyimide base substrate and forming, by ablating the second area of the polyimide base substrate, a second carbonaceous material film comprising a second specific resistive value. A tapered resistive material is produced by forming the first carbonaceous material film comprising the first specific resistive value and the second carbonaceous material film comprising the second specific resistive value.

In certain embodiments, a method comprises ablating, by a laser set to a first power level, a first area of a polyimide base substrate and forming, by ablating the first area of the polyimide base substrate, a first carbonaceous material film comprising a first specific resistive value. The method further comprises ablating, by the laser set to a second power level, a second area of the polyimide base substrate and forming, by ablating the second area of the polyimide base substrate, a second carbonaceous material film comprising a second specific resistive value. A tapered resistive material is produced by forming the first carbonaceous material film comprising the first specific resistive value and the second carbonaceous material film comprising the second specific resistive value.

A resistor includes a first insulator, a resistive body, a second insulator, a pair of electrodes, and a covering body. The first insulator has a first obverse surface facing in a thickness direction thereof. The resistive body is provided on the first obverse surface. The second insulator covers the resistive body. The pair of electrodes are electrically connected to the resistive body at both sides in a first direction perpendicular to the thickness direction. The covering body is formed on at least one of the first insulator and the second insulator. The covering body has electrical conductivity. The first layer is in contact with at least one of the first insulator and the second insulator.

A resistor includes a first insulator, a resistive body, a second insulator, a pair of electrodes, and a covering body. The first insulator has a first obverse surface facing in a thickness direction thereof. The resistive body is provided on the first obverse surface. The second insulator covers the resistive body. The pair of electrodes are electrically connected to the resistive body at both sides in a first direction perpendicular to the thickness direction. The covering body is formed on at least one of the first insulator and the second insulator. The covering body has electrical conductivity. The first layer is in contact with at least one of the first insulator and the second insulator.

A resistor includes a first insulator, a resistive body, a second insulator, a pair of electrodes, and a covering body. The first insulator has a first obverse surface facing in a thickness direction thereof. The resistive body is provided on the first obverse surface. The second insulator covers the resistive body. The pair of electrodes are electrically connected to the resistive body at both sides in a first direction perpendicular to the thickness direction. The covering body is formed on at least one of the first insulator and the second insulator. The covering body has electrical conductivity. The first layer is in contact with at least one of the first insulator and the second insulator.

A resistor arrangement having a first electrically conductive connection element and a second electrically conductive connection element, a first resistance element which is electrically conductively connected to the first connection element, a second resistance element which is electrically conductively connected to the second connection element, an electrically conductive intermediate element arranged between the first resistance element and the second resistance element and connected with these resistance elements in an electrically conductive manner, wherein the connection elements, the resistance elements and the intermediate element are arranged side by side in a row. The connection elements and the intermediate element on the one hand and the resistance elements on the other hand formed of different materials, wherein the material of the first resistance element differs from the material of the second resistance element.

The invention is to provide a chip resistor suitable for lowering an initial resistance value. A chip resistor 1 according to the present invention is provided with: an insulating substrate 2; a pair of front electrodes 3 which are provided on a front surface of the insulating substrate 2 so as to face each other with a predetermined interval therebetween; a resistive element 4 which is provided so as to bridge the front electrodes 3; a pair of auxiliary electrodes 5 which are provided so as to cover the front electrodes 3 and overlap end portions of the resistive element 4; and the like. The chip resistor 1 is configured such that: the front electrodes 3 are formed of a material which contains 1 to 5 wt % Pd and the balance Ag; and the auxiliary electrodes 5 are formed of a material which contains 15 to 30 wt % Pd and a metal material (e.g. Au) lower in resistivity than Pd and the balance Ag.

The invention is to provide a chip resistor suitable for lowering an initial resistance value. A chip resistor 1 according to the present invention is provided with: an insulating substrate 2; a pair of front electrodes 3 which are provided on a front surface of the insulating substrate 2 so as to face each other with a predetermined interval therebetween; a resistive element 4 which is provided so as to bridge the front electrodes 3; a pair of auxiliary electrodes 5 which are provided so as to cover the front electrodes 3 and overlap end portions of the resistive element 4; and the like. The chip resistor 1 is configured such that: the front electrodes 3 are formed of a material which contains 1 to 5 wt % Pd and the balance Ag; and the auxiliary electrodes 5 are formed of a material which contains 15 to 30 wt % Pd and a metal material (e.g. Au) lower in resistivity than Pd and the balance Ag.