A coil-incorporated multilayer substrate includes base materials and a coil portion including conductor patterns that are wound a plurality of times on at least one of the base materials, and, in a predetermined direction along the surface of the base material of the coil portion, the width of outermost conductor patterns is larger than the widths of the conductor patterns between an innermost conductor pattern and an outermost conductor pattern, the width of the innermost conductor pattern is larger than the widths of the conductor patterns between the outermost conductor pattern and the innermost conductor pattern, and the width of the innermost conductor pattern is larger than the distance between the innermost conductor pattern and the conductor pattern adjacent to the innermost conductor pattern.

Methods of coupling inductors in an IC device using interconnecting elements with solder caps and the resulting device are disclosed. Embodiments include forming a top inductor structure, in a top inductor area on a lower surface of a top substrate, the top inductor structure having first and second top terminals at its opposite ends; forming a bottom inductor structure, in a bottom inductor area on an upper surface of a bottom substrate, the bottom inductor structure having first and second bottom terminals at its opposite ends; forming top interconnecting elements on the lower surface of the top substrate around the top inductor area; forming bottom interconnecting elements on the upper surface of the bottom substrate around the bottom inductor area; forming solder bumps on lower and upper surfaces, respectively, of the top and bottom interconnecting elements; and connecting the top and bottom interconnecting elements to each other.

A semiconductor device has a substrate, a first circuit, a first inductor, a second circuit and a second inductor IND2. The substrate includes a first region and a second region, which are regions different from each other. The first circuit is formed on the first region. The first inductor is electrically connected with the first circuit. The second circuit is formed on the second regions. The second inductor is electrically connected with the second circuit and formed to face the first inductor. A penetrating portion is formed in the substrate. The penetrating portion is formed such that the penetrating portion surrounds one or both of the first circuit and the second circuit in plan view.

A method of forming a package structure includes: forming an inductor comprising a through-via over a carrier; placing a semiconductor device over the carrier; molding the semiconductor device and the through-via in a molding material; and forming a first redistribution layer on the molding material, wherein the inductor and the semiconductor device are electrically connected by the first redistribution layer.

A stacked transformer or inductor apparatus including a first layer with a first layer wire element extending around a center axis and a second layer with a second layer wire element. The second layer element includes side by side first and second wire components in parallel spaced relation extending around the center axis and the first wire component is connected to the first layer wire element to form a primary turn winding. A third layer includes a third layer wire element extending around the center axis and connected to the second wire component of the second layer wire element to form a secondary turn winding partially overlapping with the primary turn winding.

A semiconductor device includes a compound substrate, at least one front side pattern, at least one backside pattern and at least one through-wafer via structure. The compound substrate includes a front side and a backside. The at least one front side pattern is arranged on the front side of the compound substrate. The at least one backside pattern is arranged on the backside of the compound substrate. The least one through-wafer via structure penetrates the compound substrate from the front side to the backside. The at least one front side pattern, the at least one backside pattern and the at least one through-wafer form a three-dimensional inductor structure.

In a described example, an integrated circuit includes: a semiconductor substrate having a first surface and an opposite second surface; at least one dielectric layer overlying the first surface of the semiconductor substrate; at least one inductor coil in the at least one dielectric layer with a plurality of coil windings separated by coil spaces, the at least one inductor coil lying in a plane oriented in a first direction parallel to the first surface of the semiconductor substrate, the at least one inductor coil electrically isolated from the semiconductor substrate by a portion of the at least one dielectric layer; and trenches extending into the semiconductor substrate in a second direction at an angle with respect to the first direction, the trenches underlying the inductor coil and filled with dielectric replacement material.

Coil structures and methods of forming are provided. The coil structure includes a substrate. A plurality of coils is disposed over the substrate, each coil comprising a conductive element that forms a continuous spiral having a hexagonal shape in a plan view of the coil structure. The plurality of coils is arranged in a honeycomb pattern, and each conductive element is electrically connected to an external electrical circuit.

The present disclosure relates to semiconductor structures and, more particularly, to series inductors and methods of manufacture. A structure includes a plurality of wiring levels each of which include a wiring structure connected in series to one another. A second wiring level being located above a first wiring level of the plurality of wiring levels. A wiring structure on the second wiring level being at least partially outside boundaries of the wiring structure of the first wiring level.

An integrated electronic circuit including: a dielectric body delimited by a front surface; A top conductive region of an integrated electronic circuit extend within a dielectric body having a front surface. A passivation structure including a bottom portion and a top portion laterally delimits an opening. The bottom portion extends on the front surface, and the top portion extends on the bottom portion. A field plate includes an internal portion and an external portion. The internal portion is located within the opening and extends on the top portion of the passivation structure. The external portion extends laterally with respect to the top portion of the passivation structure and contacts at a bottom one of: the dielectric body or the bottom portion of the passivation structure. The opening and the external portion are arranged on opposite sides of the top portion of the passivation structure.