A false tooth assembly for a generator stator core is presented. The false tooth assembly has a tapered shape including multiple tapered false tooth pieces. The multiple tapered false tooth pieces are installed into a damaged area in a tooth of a lamination of the stator core such that a wide end of the false tooth assembly is disposed into a wide opening of the damaged area and a narrow end of the false tooth assembly is flushed with a narrow opening of the damaged area at a tip of the tooth. The tapered shape of the false tooth assembly enables the false tooth assembly to fill the entire damaged area and to lock the false tooth assembly into the damaged area. The false tooth assembly can be used to repair stator core in any region of the stator core including step iron region without being dislodged during generator operation.

A false tooth assembly for a generator stator core is presented. The false tooth assembly has a tapered shape including multiple tapered false tooth pieces. The multiple tapered false tooth pieces are installed into a damaged area in a tooth of a lamination of the stator core such that a wide end of the false tooth assembly is disposed into a wide opening of the damaged area and a narrow end of the false tooth assembly is flushed with a narrow opening of the damaged area at a tip of the tooth. The tapered shape of the false tooth assembly enables the false tooth assembly to fill the entire damaged area and to lock the false tooth assembly into the damaged area. The false tooth assembly can be used to repair stator core in any region of the stator core including step iron region without being dislodged during generator operation.

A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

A system and method for a logic device is disclosed. A first input nanotrack, a second input nanotrack and an output nanotrack are disposed over a substrate along a first axis. Output nanotrack is disposed between the input nanotracks. Each nanotrack have a first end and a second end. A connector nanotrack connects the first input nanotrack, the second input nanotrack, and the output nanotrack. An input value is defined at a first end of the input nanotracks by selectively nucleating a skyrmion at the first end. Presence of the skyrmion is indicative of a first value and absence of the skyrmion indictive of a second value. Nucleated skyrmion moves to the second end of the output nanotrack when a charge current is passed along the first axis. Presence of the skyrmion at the second end indicates an output value of the first value.

A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2).sub.YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2).sub.XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2).sub.X laminate (x is 5 to 50) to improve robustness. The (A1/A2).sub.Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.