Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a first heavy metal layer and a first magnetic tunnel junctions (MTJ) coupled to the first heavy metal layer. The first MTJ has a first area. The MRAM cell further comprises a second MTJ. The second MTJ is connected in series with the first MTJ, and the second MTJ has a second area that is different than the first area. The second MTJ shared a reference layer with the first MTJ. The MRAM cell further comprises a second heavy metal layer that is coupled to the second MTJ.

Methods and devices are provided that include a magnetic tunneling junction (MTJ) element. A first spacer layer abuts sidewalls of the MTJ element. The first spacer layer has a low-dielectric constant (low-k) oxide composition. A second spacer layer is disposed on the first spacer layer and has a low-k nitride composition.

Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a first heavy metal layer and a first magnetic tunnel junctions (MTJ) coupled to the first heavy metal layer. The first MTJ has a first area. The MRAM cell further comprises a second MTJ. The second MTJ is connected in series with the first MTJ, and the second MTJ has a second area that is different than the first area. The second MTJ shared a reference layer with the first MTJ. The MRAM cell further comprises a second heavy metal layer that is coupled to the second MTJ.

Methods and devices are provided that include a magnetic tunneling junction (MTJ) element. A first spacer layer abuts sidewalls of the MTJ element. The first spacer layer has a low-dielectric constant (low-k) oxide composition. A second spacer layer is disposed on the first spacer layer and has a low-k nitride composition.

Methods and devices are provided that include a magnetic tunneling junction (MTJ) element. A first spacer layer abuts sidewalls of the MTJ element. The first spacer layer has a low-dielectric constant (low-k) oxide composition. A second spacer layer is disposed on the first spacer layer and has a low-k nitride composition.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a device includes a substrate, a titanium nitride diffusion barrier layer formed upon the substrate, a titanium layer formed upon the titanium nitride diffusion barrier layer, a platinum seed layer, and a cobalt-platinum magnetic layer formed upon the platinum seed layer. Based in part on the use of the titanium nitride diffusion barrier layer and/or the platinum seed layer, improvements in the interfaces between the layers can be achieved after annealing, with less delamination, and with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer. Further, the cobalt-platinum magnetic layer can be formed at a relatively thin thickness of hundreds of nanometers to a few microns while still maintaining good magnetic properties.

A method for producing a permanent or soft magnet including the following steps: a) providing: a solution containing a solvent in which are dispersed a set of objects which possess a permanent magnetic moment; a substrate on which are fixed to the surface or within a cavity that it may have, a 1st pad and a 2nd pad, said 1st pad includes a face facing and parallel to a face that the 2nd pad includes; b) the solution is deposited on the surface of the substrate or, as the case may be, within its cavity; c) the substrate is placed in a magnetic field so that the set of objects are grouped together between the face of the 1st pad and the face of the 2nd pad so as to form a permanent magnet.