In an approach for forming a nonvolatile tunable capacitor device, a first electrode layer is formed distally opposed from a second electrode layer, the first electrode layer configured to make a first electrical connection and the second electrode layer configured to make a second electrical connection. A dielectric layer is posited between the first electrode layer and adjacent to the second electrode layer. A phase change material (PCM) layer is posited between the first electrode layer and the second electrode layer adjacent to the dielectric layer. An energizing component is provided to heat the PCM layer to change a phase of the PCM layer. The energizing component may include a heating element or electrical probe in direct contact with the PCM layer, that when energized is configured to apply heat to the PCM layer. The phase of the PCM layer is changeable between an amorphous phase and a crystalline phase.

Provided is a system for directly sensing, measuring, or monitoring the temperature of an electrical conductor (31) of a power cable (10). A temperature sensitive capacitor (21C) is disposed in direct thermal contact with the electrical conductor (31). The temperature sensitive capacitor (21C) includes a dielectric material that has a dielectric constant variable with the temperature of the electrical conductor (31). The temperature of the electrical conductor (31) can be sensed, measured, or monitored by measuring the capacitance of the temperature sensitive capacitor (21C).

A capacitive sensor is disclosed. The capacitive sensor includes a substrate, a first electrode and a second electrode formed on the substrate, an insulation layer formed on the substrate on which the first electrode and the second electrode are formed, and a sensing layer that is formed on the insulation layer and includes graphene.

The present disclosure provides an energy conversion system and method for generating electricity directly from heat by phase transformation of ferroelectric materials without any external power sources. The energy conversion system includes an electric circuit comprising a phase-changing capacitor and a charge reservoir. The phase-changing capacitor has a dielectric layer comprising a phase-transforming ferroelectric material. When the phase-changing capacitor is initialized and subjected to thermal cycles through a transformation temperature of the phase-transforming ferroelectric material, the polarization of the dielectric layer undergoes an abrupt change between a ferroelectric phase and a paraelectric phase such that a current flow between the phase-changing capacitor and the charge reservoir via a load thereby converting heat into electrical energy. The present energy conversion method does not require any external bias fields during the energy conversion.

The present disclosure provides an energy conversion system and method for generating electricity directly from heat by phase transformation of ferroelectric materials without any external power sources. The energy conversion system includes an electric circuit comprising a phase-changing capacitor and a charge reservoir. The phase-changing capacitor has a dielectric layer comprising a phase-transforming ferroelectric material. When the phase-changing capacitor is initialized and subjected to thermal cycles through a transformation temperature of the phase-transforming ferroelectric material, the polarization of the dielectric layer undergoes an abrupt change between a ferroelectric phase and a paraelectric phase such that a current flow between the phase-changing capacitor and the charge reservoir via a load thereby converting heat into electrical energy. The present energy conversion method does not require any external bias fields during the energy conversion.

Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO.sub.3 and BaTiO.sub.3—Al.sub.2O.sub.3 bi-layer thin films based on nanocry stalline BaTiO.sub.3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiO.sub.3 films having tuned Curie temperatures. Further provided are capacitive components, comprising: a plurality of films, the plurality of films comprising: a first grained film component, the first grained film component comprising at least one of SrTiO.sub.3, BaTiO.sub.3, and (Ba, Sr)TiO.sub.3, and the first grained film component being characterized as being at least partially polymorphic crystalline in nature; a second film component contacting the first grained film component, the second film component optionally comprising Al.sub.2O.sub.3, and the first grained film component optionally defining an average grain size of less than about 10 micrometers.

In an approach for forming a nonvolatile tunable capacitor device, a first electrode layer is formed distally opposed from a second electrode layer, the first electrode layer configured to make a first electrical connection and the second electrode layer configured to make a second electrical connection. A dielectric layer is posited between the first electrode layer and adjacent to the second electrode layer. A phase change material (PCM) layer is posited between the first electrode layer and the second electrode layer adjacent to the dielectric layer. An energizing component is provided to heat the PCM layer to change a phase of the PCM layer. The energizing component may include a heating element or electrical probe in direct contact with the PCM layer, that when energized is configured to apply heat to the PCM layer. The phase of the PCM layer is changeable between an amorphous phase and a crystalline phase.

A switchable metal insulator metal capacitor (MIMcap) and a method for fabricating the MIMcap. In another aspect of the invention operating the MIMcap is also described. A first capacitor plate and a second capacitor plate are separated by a capacitor dielectric and disposed over a substrate. A first via is electrically connected to the first capacitor plate and comprised of phase change material (PCM). The PCM is deposited in an electrically conductive state and convertible by application of heat to an insulating state. A first heater is proximate to and electrically isolated from the PCM in the first via. When the first heater is activated it converts the PCM in the first via to the insulating state. This isolates the first capacitor plate from an integrated circuit.

Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO.sub.3 and BaTiO.sub.3—AlO.sub.3 bi-layer thin films based on nanocrystalline BaTiO.sub.3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiCb films having tuned Curie temperatures. Also provide are nano-grained films, comprising: a BaTiO.sub.3 film component comprising a Ba/Ti ratio of between about 0.8 and 1.06, a transition temperature of the nano-grained film being dependent on the Ba/Ti ratio, and the nano-grained film exhibiting a diffused phase transition, optionally whereby a temperature density of a dielectric constant of the nano-grained film is minimized.

Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO.sub.3 and BaTiO.sub.3—AlO.sub.3 bi-layer thin films based on nanocrystalline BaTiO.sub.3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiCb films having tuned Curie temperatures. Also provide are nano-grained films, comprising: a BaTiO.sub.3 film component comprising a Ba/Ti ratio of between about 0.8 and 1.06, a transition temperature of the nano-grained film being dependent on the Ba/Ti ratio, and the nano-grained film exhibiting a diffused phase transition, optionally whereby a temperature density of a dielectric constant of the nano-grained film is minimized.