The invention provides novel latexes of particles of vinylidene fluoride/trifluoroethylene copolymers possessing a more ordered ferroelectric crystalline phase, and hence improved ferro-, pyro-, and piezo-electric properties, and a method for manufacturing the same by emulsion polymerization in the presence of certain cyclic fluorosurfactants.

Provided is a piezoelectric material filler including alkali niobate compound particles having a ratio (K/(Na+K)) of the number of moles of potassium to the total number of moles of sodium and potassium of 0.460 to 0.495 in terms of atoms and a ratio ((Li+Na+K)/Nb) of the total number of moles of alkali metal elements to the number of moles of niobium of 0.995 to 1.005 in terms of atoms. The present invention can provide a piezoelectric material filler having excellent piezoelectric properties, and a composite piezoelectric material including the piezoelectric material filler and a polymer matrix.

A vibration transducer for sensing vibrations includes a first flexible triboelectric member, a second flexible triboelectric member, a plurality of attachment points, a first electrode and a second electrode. The first flexible triboelectric member includes a first triboelectric layer and a material being on a first position on a triboelectric series. A conductive layer is deposited on the second side thereof. The second flexible triboelectric member includes a second triboelectric layer and a material being on a second position on the triboelectric series that is different from the first position on the triboelectric series. The second triboelectric member is adjacent to the first flexible triboelectric member. When the first triboelectric member comes into and out of contact with the second triboelectric member as a result of the vibrations, a triboelectric potential difference having a variable intensity corresponding to the vibrations can be sensed between the first and second triboelectric members.

A vibration transducer for sensing vibrations includes a first flexible triboelectric member, a second flexible triboelectric member, a plurality of attachment points, a first electrode and a second electrode. The first flexible triboelectric member includes a first triboelectric layer and a material being on a first position on a triboelectric series. A conductive layer is deposited on the second side thereof. The second flexible triboelectric member includes a second triboelectric layer and a material being on a second position on the triboelectric series that is different from the first position on the triboelectric series. The second triboelectric member is adjacent to the first flexible triboelectric member. When the first triboelectric member comes into and out of contact with the second triboelectric member as a result of the vibrations, a triboelectric potential difference having a variable intensity corresponding to the vibrations can be sensed between the first and second triboelectric members.

A variable capacitance element includes variable capacitance layers made of a dielectric material, paired electrodes located on both main surfaces of the variable capacitance layers opposite to each other across the variable capacitance layers, insulating elements; and at least one pair of lead-out elements. The variable capacitance layers and the insulating elements are alternately laminated to provide a laminated body. The variable capacitance layers and the paired electrodes define capacitor structures, and the lead-out elements are electrically connected at one end thereof to an electrode defining the capacitor structures, penetrate the insulating elements, and are electrically connected at the other end to external electrodes or other electrical elements.

A variable capacitance element includes variable capacitance layers made of a dielectric material, paired electrodes located on both main surfaces of the variable capacitance layers opposite to each other across the variable capacitance layers, insulating elements; and at least one pair of lead-out elements. The variable capacitance layers and the insulating elements are alternately laminated to provide a laminated body. The variable capacitance layers and the paired electrodes define capacitor structures, and the lead-out elements are electrically connected at one end thereof to an electrode defining the capacitor structures, penetrate the insulating elements, and are electrically connected at the other end to external electrodes or other electrical elements.

A variable capacitance element includes a variable capacitance layer made of a dielectric material, an electrode to obtain electrostatic capacitance in the variable capacitance layer, insulating elements that face each other via the variable capacitance layer, and a lead element extending from the electrode, wherein the insulating elements are made of an insulating material which contains Sr and at least one of Ti and Zr.

A variable capacitance element includes a variable capacitance layer made of a dielectric material, an electrode to obtain electrostatic capacitance in the variable capacitance layer, insulating elements that face each other via the variable capacitance layer, and a lead element extending from the electrode, wherein the insulating elements are made of an insulating material which contains Sr and at least one of Ti and Zr.

A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

A semiconductor device comprising a semiconductor substrate and a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises a capacitor stack comprising a lower and an upper capacitor, respectively comprising first and second dielectric materials, wherein the first and second dielectric materials are different materials and/or have different thicknesses from each other. This can minimize the voltage dependence of the capacitance of the composite capacitor structure. It is also possible to provide a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises at least a first and a second capacitor stack, each comprising a lower and an upper capacitor. The capacitors can be MIM capacitors.