A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

A DC high-voltage relay with at least one contact pair including a movable contact and a fixed contact, the contact pair having a contact force and/or an opening force of 100 gf or more, having a rated voltage of 48 V or more, the movable contact and/or the fixed contact includes a Ag oxide-based contact material. Metal components contain at least one metal M essentially containing Zn, and a balance being Ag and inevitable impurity metals, and the contact material has a content of the metal M of 0.2% by mass or more and 8% by mass or less based on a total mass. The contact material has a material structure in which one or more oxides of the metal M having an average particle size of 0.01 μm or more and 0.4 μm or less are dispersed in a matrix including Ag or a Ag alloy.

A DC high-voltage relay with at least one contact pair including a movable contact and a fixed contact, the contact pair having a contact force and/or an opening force of 100 gf or more, having a rated voltage of 48 V or more, the movable contact and/or the fixed contact includes a Ag oxide-based contact material. Metal components contain at least one metal M essentially containing Zn, and a balance being Ag and inevitable impurity metals, and the contact material has a content of the metal M of 0.2% by mass or more and 8% by mass or less based on a total mass. The contact material has a material structure in which one or more oxides of the metal M having an average particle size of 0.01 μm or more and 0.4 μm or less are dispersed in a matrix including Ag or a Ag alloy.

A preparation method for a silver-metal oxide electrical contact material, comprising: (1) mixing a silver-containing precursor solution with a metal oxide precursor solution; (2) reacting a reducing agent with the mixed solution to obtain silver powder coated with a metal oxide precursor; (3) heat treating the silver powder in a non-reducing atmosphere to obtain the silver-metal oxide electrical contact material. A preparation device for a silver-metal oxide electrical contact material, a silver-metal oxide electrical contact material prepared by the preparation method, and an electrical contact prepared by the silver-metal oxide electrical contact material. The electrical contact material prepared by the preparation method is at nanoscale, significantly prolonging electrical endurance of the electrical contact.

A preparation method for a silver-metal oxide electrical contact material, comprising: (1) mixing a silver-containing precursor solution with a metal oxide precursor solution; (2) reacting a reducing agent with the mixed solution to obtain silver powder coated with a metal oxide precursor; (3) heat treating the silver powder in a non-reducing atmosphere to obtain the silver-metal oxide electrical contact material. A preparation device for a silver-metal oxide electrical contact material, a silver-metal oxide electrical contact material prepared by the preparation method, and an electrical contact prepared by the silver-metal oxide electrical contact material. The electrical contact material prepared by the preparation method is at nanoscale, significantly prolonging electrical endurance of the electrical contact.

A method of preparing silver-based oxide electrical contact materials with fiber-like arrangement, includes the following steps of: (1) uniformly mixing the silver-metal alloy powders and graphite powders and then ball-milling; (2) internally oxidizing the ball-milled powders; (3) sieving; (4) placing the sieved powders and the matrix powders into the powder mixer for mixing; (5) cold-isostatically pressing; (6) sintering; (7) hot-pressing; and (8) hot-extruding, thereby obtaining the silver-based oxide electrical contact material with fiber-like arrangement. The method of the present invention can obtain the silver-based oxide electrical contact material having neat fiber-like arrangement with no specific requirement on processing deformation, plasticity and ductility of the reinforcing phase. The production process in this method is simple and is easy to operate. Besides, there is no particular requirement on the equipment. The method greatly improves the performance of contact materials in aspects of resistance to welding and arc erosion, conductivity, and processing performance.

A method of preparing silver-based oxide electrical contact materials with fiber-like arrangement, includes the following steps of: (1) uniformly mixing the silver-metal alloy powders and graphite powders and then ball-milling; (2) internally oxidizing the ball-milled powders; (3) sieving; (4) placing the sieved powders and the matrix powders into the powder mixer for mixing; (5) cold-isostatically pressing; (6) sintering; (7) hot-pressing; and (8) hot-extruding, thereby obtaining the silver-based oxide electrical contact material with fiber-like arrangement. The method of the present invention can obtain the silver-based oxide electrical contact material having neat fiber-like arrangement with no specific requirement on processing deformation, plasticity and ductility of the reinforcing phase. The production process in this method is simple and is easy to operate. Besides, there is no particular requirement on the equipment. The method greatly improves the performance of contact materials in aspects of resistance to welding and arc erosion, conductivity, and processing performance.