Electrodeless high intensity discharge lamps have the promise of higher reliability and higher efficiency than traditional electroded high intensity discharge lamps. However most electrodeless HIDs operate in the frequency range of around 400 MHz to 2.5 GHz resulting in expensive, inefficient RF drivers that reduce the overall efficacy of the lamp. Operating the lamp at lower frequencies results in substantial increase in the size of the resonators used in traditional electrodeless HIDs. In this invention a novel design is used to lower the operating frequency of the resonator without increasing the size of the resonator. This provides an avenue to increase the conversion efficiency of the RF driver and the efficacy of the lamp system.

A novel compact air-cavity electrodeless high intensity discharge lamp is disclosed that provides added flexibility in its design to improve performance and reliability. A coupling sleeve surrounds a bulb assembly that can replace the output coupling element require for effective operation of the lamp. The coupling sleeve couples the RF energy from the input coupling element to the bulb and the bulb assembly serves to provide the heat sinking needed for the bulb to operate within the temperature range necessary to achieve optimum performance with good reliability. Changing the design of the bulb assembly does not impact the resonant frequency of the air-cavity resonator. De-coupling the bulb assembly design from the operating frequency of the resonator gives more flexibility to designer to optimize the overall performance of the electrodeless HID lamp.

A field emission cathode device comprises a field emission cathode including a cylindrical substrate and a field emission material deposited on a cylindrical surface thereof. The field emission cathode defines a longitudinal axis. A solenoid extends concentrically about the cylindrical surface, and defines a gap therebetween. The solenoid defines opposed open ends perpendicular to the longitudinal axis. A current source directs a constant polarity (DC) current to the solenoid, that forms a magnetic field along the solenoid. A gate voltage source electrically connected to the solenoid or the field emission cathode interacts therewith to generate an electric field inducing the field emission cathode to emit electrons from the field emission material into the gap. The emitted electrons are responsive to the magnetic field to spiral within the gap and about the longitudinal axis, in correspondence with the current flow in the solenoid, through the first open end of the solenoid.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.