An emitter according to the present disclosure includes: first and second heaters generating heat by energization; an electron source comprising a first material emitting an electron by being heated by the first and second heaters; and an intermediate member interposed between the electron source, and the first and second heaters, the intermediate member comprising a second material lower in thermal conductivity than the first material.

A system for x-ray analysis includes at least one x-ray source configured to emit x-rays. The at least one x-ray source includes at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source. At least some of the x-rays emitted from the at least one x-ray source includes Si x-ray emission line x-rays. The system further includes at least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays.

A system for x-ray analysis includes at least one x-ray source configured to emit x-rays. The at least one x-ray source includes at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source. At least some of the x-rays emitted from the at least one x-ray source includes Si x-ray emission line x-rays. The system further includes at least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays.

An emitter includes: an insulator; a pair of conductive terminals attached to the insulator and spaced apart from each other; a heater disposed between tips of the pair of conductive terminals and generating heat when energized; an electron source heated by the heater and made of a first material emitting electrons; a Wehnelt electrode having an inner surface forming an internal space apart with a surface of the insulator, and applying a bias voltage across the Wehnelt electrode and the electron source; and a shielding member covering a part of the surface of the insulator in the internal space.

A plasma processing apparatus includes a chamber defining a plasma processing space, a substrate support, an upper electrode above the substrate support and being a part of a ceiling extending above the plasma processing space and closing an opening of the chamber to receive radio-frequency power, a first insulating member being a part of the ceiling and located between the upper electrode and the chamber to electrically isolate the upper electrode from the chamber, and a shield being another part of the ceiling, being conductive, and being formed from a silicon-containing material. The shield extends from a peripheral edge of the upper electrode to the chamber. The ceiling includes a portion exposed to the plasma processing space. The portion includes a conductor including the upper electrode and the shield.

An emitter includes: an insulator; a pair of conductive terminals attached to the insulator and spaced apart from each other; a heater disposed between tips of the pair of conductive terminals and generating heat when energized; an electron source heated by the heater and made of a first material emitting electrons; a Wehnelt electrode having an inner surface forming an internal space along with a surface of the insulator, and applying a bias voltage across the Wehnelt electrode and the electron source; and a shielding member covering a part of the surface of the insulator in the internal space.