The present disclosure relates to a collimator. The collimator may include a motor, a transmission unit having a first end and a second end, and a leaf unit having a leaf. The first end of the transmission unit may be connected to the motor and the second end of the transmission unit may be connected to the leaf. The present disclosure also relates to a collimator system. The collimator system may include a leaf module having a leaf, a driving module having a motor configured to drive the leaf, and a processing module to generate a movement profile of the leaf. The movement profile of the leaf may include a first speed during a first stage, a second speed of the leaf during a second stage, and a third speed of the leaf during a third stage.

To improve the workability of the task of adjusting the position of a limit field diaphragm. An electron microscope provided with an image-capturing means for capturing an image of an observation visual field prior to insertion of a limit field diaphragm as a map image, a recording means for recording the map image, an extraction means for capturing an image of the observation visual field after insertion of the limit field diaphragm and extracting the outline of the diaphragm, a drawing means for drawing the outline on the map image, and a display means for displaying the image drawn by the drawing means.

An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

The present disclosure relates to a collimator. The collimator may include a motor, a transmission unit having a first end and a second end, and a leaf unit having a leaf. The first end of the transmission unit may be connected to the motor and the second end of the transmission unit may be connected to the leaf. The present disclosure also relates to a collimator system. The collimator system may include a leaf module having a leaf, a driving module having a motor configured to drive the leaf, and a processing module to generate a movement profile of the leaf. The movement profile of the leaf may include a first speed during a first stage, a second speed of the leaf during a second stage, and a third speed of the leaf during a third stage.

Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 μm and equal to or less than 500 μm from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.

The present disclosure relates to a collimator. The collimator may include a motor, a transmission unit having a first end and a second end, and a leaf unit having a leaf. The first end of the transmission unit may be connected to the motor and the second end of the transmission unit may be connected to the leaf. The present disclosure also relates to a collimator system. The collimator system may include a leaf module having a leaf, a driving module having a motor configured to drive the leaf, and a processing module to generate a movement profile of the leaf. The movement profile of the leaf may include a first speed during a first stage, a second speed of the leaf during a second stage, and a third speed of the leaf during a third stage.

The present invention relates to an apparatus and a method for an electron beam system for manufacturing a three-dimensional object by fusing successive layers of powder, said system having at least one lens for reshaping of said electron beam, an electron source and a powder bed, said method comprising the step: blocking a selected cross section of said electron beam for controlling the electron beam power. By interference between the electron beam and a beam blocking part a portion of the electron beam is prevented from reaching the powder bed.

A system for defect review and classification is disclosed. The system may include a controller, wherein the controller may be configured to receive one or more training images of a specimen. The one or more training images including a plurality of training defects. The controller may be further configured to apply a plurality of difference filters to the one or more training images, and receive a signal indicative of a classification of a difference filter effectiveness metric for at least a portion of the plurality of difference filters. The controller may be further configured to generate a deep learning network classifier based on the received classification and the attributes of the plurality of training defects. The controller may be further configured to extract convolution layer filters of the deep learning network classifier, and generate one or more difference filter recipes based on the extracted convolution layer filters.

Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 μm and equal to or less than 500 μm from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.

Embodiments herein provide systems and methods for multi-area selecting etching. In some embodiments, a system may include a plasma source delivering a plurality of angled ion beams to a substrate, the substrate including a plurality of devices. Each of the plurality of devices may include a first angled grating and a second angled grating. The system may further include a plurality of blocking masks positionable between the plasma source and the substrate. A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the angled ion beams to pass therethrough to form the first angled gratings of each of the plurality of devices. A second blocking mask of the plurality of blocking masks may include a second set of openings permitting the angled ion beams to pass therethrough to form the second angled gratings of each of the plurality of devices.