An apparatus may include a drift tube assembly, arranged to transmit an ion beam. The drift tube assembly may include a first ground electrode; an RF drift tube assembly, disposed downstream of the first ground electrode; and a second ground electrode, disposed downstream of the RF drift tube assembly. The RF drift tube assembly may define a triple gap configuration. The apparatus may include a resonator, where the resonator comprises a toroidal coil, having a first end, connected to a first RF drift tube of the RF drift tube assembly, and a second end, connected to a second RF drift tube of the RF drift tube assembly.

In order to improve a yield of light generated by a collision between secondary electrons and gas molecules, the invention provides a charged particle beam device including: a charged particle beam source configured to irradiate a sample with a charged particle beam; a sample chamber configured to hold the sample and a gas molecule; a positive electrode configured to form an electric field that accelerates a secondary electron emitted from the sample; a photodetector configured to detect light generated by a collision between the accelerated secondary electron and the gas molecule; and a light condensing unit disposed between the sample and the photodetector, having a light emitting space in which the light is generated, and configured to condense the light generated in the light emitting space on a photodetector side.

An apparatus may include an RF power assembly, arranged to output an RF signal, and a drift tube assembly, arranged to transmit an ion beam, and coupled to the RF power assembly. The drift tube assembly may include a first ground electrode; an AC drift tube assembly, disposed downstream of the first ground electrode; and a second ground electrode, disposed downstream of the AC drift tube assembly, where the AC drift tube assembly comprises at least one variable length AC drift tube.

A system and apparatus for electron beam melting comprises a superconducting radio frequency accelerator configured to produce an electron beam, a conduction cooling system configured to cool the superconducting radio frequency accelerator, and an electron beam melting system wherein the electron beam melts power in a build chamber of the electron beam melting apparatus.

The invention provides a power supply device and a charged particle beam device capable of reducing noise generated between a plurality of voltages. The charged particle beam device includes a charged particle gun configured to emit a charged particle beam, a stage on which a sample is to be placed, and a power supply circuit configured to generate a first voltage and a second voltage that determine energy of the charged particle beam and supply the first voltage to the charged particle gun. The power supply circuit includes a first booster circuit configured to generate the first voltage, a second booster circuit configured to generate the second voltage, and a switching control circuit configured to perform switching control of the first booster circuit and the second booster circuit using common switch signals.

An apparatus may include a drift tube assembly, the drift tube assembly defining a triple gap configuration, and arranged to accelerate and transmit an ion beam along abeam path. The apparatus may include a resonator, to output an RF signal to the drift tube assembly, and an RF quadrupole triplet, connected to the drift tube assembly, and arranged circumferentially around the beam path.

The invention provides a charged particle beam device that prevents a leakage of an unnecessary magnetic field to a trajectory of a charged particle beam with which a sample is irradiated in a sample observation according to a boosting method. The charged particle beam device includes: a charged particle source configured to generate the charged particle beam with which the sample is irradiated; an object lens configured to generate the magnetic field for focusing the charged particle beam; and a boosting electrode that is provided inside the object lens and to which a voltage for accelerating the charged particle beam is applied. The boosting electrode is formed of a magnetic material.

A plasma processing apparatus includes a processing vessel in which a substrate as a target of a plasma processing is disposed; a plasma forming device configured to form plasma within the processing vessel; a focusing device disposed within the processing vessel, and configured to focus multiple ions in the plasma to output an ion beam; and a sorting device configured to sort out, from the ion beam outputted from the focusing device, a specific ion to be supplied to the substrate.

An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy. The linear accelerator may include a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises: a drift tube assembly, arranged to conduct the ion beam; a resonator, electrically coupled to the drift tube assembly; and an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator. As such, the given acceleration stage does not include a quadrupole element.

The invention provides a charged particle beam device that prevents a leakage of an unnecessary magnetic field to a trajectory of a charged particle beam with which a sample is irradiated in a sample observation according to a boosting method. The charged particle beam device includes: a charged particle source configured to generate the charged particle beam with which the sample is irradiated; an object lens configured to generate the magnetic field for focusing the charged particle beam; and a boosting electrode that is provided inside the object lens and to which a voltage for accelerating the charged particle beam is applied. The boosting electrode is formed of a magnetic material.