An apparatus may include a drift tube assembly, arranged to transmit an ion beam. The drift tube assembly may include a first ground electrode; an RF drift tube assembly, disposed downstream of the first ground electrode; and a second ground electrode, disposed downstream of the RF drift tube assembly. The RF drift tube assembly may define a triple gap configuration. The apparatus may include a resonator, where the resonator comprises a toroidal coil, having a first end, connected to a first RF drift tube of the RF drift tube assembly, and a second end, connected to a second RF drift tube of the RF drift tube assembly.

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port.

Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.

Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, the linear accelerator assembly may include a central support within a chamber, and a plurality of modules coupled to the central support, at least one module of the plurality of modules including an electrode having an aperture for receiving and delivering an ion beam along a beamline axis.

There is provided an electron microscope in which a crossover position can be kept constant. The electron microscope (100) includes: an electron source (110) for emitting an electron beam; an acceleration tube (170) having acceleration electrodes (170a-170f) and operative to accelerate the electron beam; a first electrode (160) operative such that a lens action is produced between this first electrode (160) and the initial stage of acceleration electrode (170a); an accelerating voltage supply (112) for supplying an accelerating voltage to the acceleration tube (170); a first electrode voltage supply (162) for supplying a voltage to the first electrode (160); and a controller (109b) for controlling the first electrode voltage supply (162). The lens action produced between the first electrode (160) and the initial stage of acceleration electrode (170a) forms a crossover (CO2) of the electron beam. The controller (109b) controls the first electrode voltage supply (162) such that, if the accelerating voltage is modified, the ratio between the voltage applied to the first electrode (160) and the voltage applied to the initial stage of acceleration electrode (170a) is kept constant.

An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy. The linear accelerator may include a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises: a drift tube assembly, arranged to conduct the ion beam; a resonator, electrically coupled to the drift tube assembly; and an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator. As such, the given acceleration stage does not include a quadrupole element.

An ion implantation method includes acquiring a first data set for setting beam energy of an ion beam output from the high energy multi-stage linear acceleration unit to be a first output value, determining a second data set for setting the beam energy of the ion beam output from the high energy multi-stage linear acceleration unit to be a second output value different from the first output value, based on the first data set, and performing ion implantation by irradiating a workpiece with the ion beam output from the high energy multi-stage linear acceleration unit operating in accordance with the second data set. An acceleration phase of the high frequency accelerator in each of the plurality of stages is the same between the first data set and the second data set, in all of the high frequency accelerators respectively in the plurality of stages.

The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.

Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, the linear accelerator assembly may include a central support within a chamber, and a plurality of modules coupled to the central support, at least one module of the plurality of modules including an electrode having an aperture for receiving and delivering an ion beam along a beamline axis.