A charged particle beam arrangement is described. The charged particle beam arrangement includes a charged particle source including a cold field emitter, a beam limiting aperture between the charged particle source and a magnetic condenser lens; the magnetic condenser lens comprising a first inner pole piece and a first outer pole piece, wherein a first axial distance between the charged particle source and the first inner pole piece is equal or less than approximately 20 mm, an acceleration section for accelerating the charged particle beam to an energy of 10 keV or more, a magnetic objective lens comprising a second inner pole piece and a second outer pole piece, a third axial distance between the second inner pole piece and a surface of a specimen is equal to or less than approximately 20 mm, and a deceleration section.

A probe assembly for analyzing a test device that includes a housing with an electron source disposed therein for emitting primary electrons. A photon source is positioned to emit photons that strike the electron source such that when the photons strike the electron source, the electron source emits the primary electrons. Detection circuitry is provided that is configured to detect secondary electrons emitted from a test device of a test assembly and to form an excitation waveform.

Provided is an atomic layer etching apparatus comprising: a plasma source; a grid assembly composed of a plurality of grids to which potentials can be applied, disposed at the front of the plasma source, and configured to extract charged particles from the plasma; and a magnetic field applying module configured to apply a magnetic field to a flight space of the charged particles so that the charged particles are obliquely incident on a target substrate at a preset angle. The charged particles extracted from the plasma by the grid assembly fly while rotating with a preset curvature by the magnetic field and are obliquely incident on the substrate. As a result, the apparatus limits the collision energy of the charged particles when they are incident on the substrate, thereby enabling atomic layer etching of the target substrate.