Patent classifications
H01J2237/06375
SCANNING ELECTRON MICROSCOPE DEVICE AND ELECTRON BEAM INSPECTION APPARATUS
A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.
METHOD AND APPARATUS FOR DETECTING DISCHARGE SITE
A method for detecting a discharge site for a charged particle beam emitting apparatus includes switchable first and second modes. The first mode enables a beam of charged particles to be deflected by applying voltages to electrodes. The second mode enables acquisition of data items indicative of potential of each of the electrodes while the beam is being emitted without applying the voltages. The method includes, in the second mode, detecting an occurrence of a discharge when a fluctuation in potential indicated by data items relating to one of the electrodes exceeds a predetermined threshold value; and detecting a site corresponding to the electrode, as a site having an occurrence of the discharge.
ION PRODUCTION SYSTEM WITH EFFICIENT ION COLLECTION
A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit or aperture configured to select a desired isotope from the ion beam such that a desired isotopic ion beam passes through the mass resolving slit or aperture, a target positioned relative to the mass resolving slit or aperture so that the desired isotopic ion beam is incident on the target, and a voltage source coupled to the target and configured to hold the target at a first voltage having the first polarity. The first voltage causes a reduction of the extraction energy as the desired isotopic ion beam approaches the target to minimize sputtering and maximize collection of the ions on the target to reconstitute an ionized material.
ELECTRON GUN, ELECTRON BEAM APPLICATION DEVICE, METHOD FOR VERIFYING EMISSION AXIS OF ELECTRON BEAM EMITTED FROM PHOTOCATHODE, AND METHOD FOR ALIGNING EMISSION AXIS OF ELECTRON BEAM EMITTED FROM PHOTOCATHODE
An object is to provide an electron gun that makes it possible to verify whether or not an electron beam emitted form a photocathode is misaligned from a designed emission center axis. The object can be achieved by an electron gun including: a light source; a photocathode; and an anode. The electron gun includes an intermediate electrode arranged between the photocathode and the anode, an electron beam shielding member configured to block a part of an electron beam, a measurement unit configured to measure an intensity of an electron beam blocked by the electron beam shielding member, and an electron beam emission direction deflector arranged between the anode and the electron beam shielding member and configured to change a position where an electron beam that passed through the anode reaches the electron beam shielding member. The intermediate electrode has an electron beam passage hole and a drift space.
PLASMA ETCHING APPARATUS AND SEMICONDUCTOR PROCESSING SYSTEM
A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.
ELECTRON GUN, ELECTRON GUN COMPONENT, ELECTRON BEAM APPLICATION DEVICE, AND POSITIONING METHOD
Provided are an electron gun, an electron gun component, an electron beam applicator, and an alignment method that can align the emission axis of an electron beam with the optical axis of the electron optical system of the counterpart device even when misalignment of a mounted position of the electron gun being mounted to the counterpart device is larger. The electron gun includes: a light source; a vacuum chamber; a photocathode that emits an electron beam in response to receiving light from the light source; an electrode kit; and an electrode kit drive device, the electrode kit includes a photocathode supporting part, and an anode arranged spaced apart from the photocathode supporting part, the photocathode is placed on the photocathode supporting part, and the electrode kit drive device moves the electrode kit in an X-Y plane, where one direction is defined as an X direction, a direction orthogonal to the X direction is defined as a Y direction, and a plane including the X direction and the Y direction is defined as the X-Y plane.
ADDITIVE MANUFACTURING OF THREE-DIMENSIONAL ARTICLES
A method is provided for forming a three-dimensional article through successively depositing individual layers of powder material that are fused together so as to form the article, the method comprising the steps of: providing at least one electron beam source emitting an electron beam for at least one of heating or fusing the powder material, where the electron beam source comprises a cathode, an anode, and a Wehnelt cup between the cathode and anode; providing a guard ring between the Wehnelt cup and the anode and in close proximity to the Wehnelt cup, where the guard ring is having an aperture which is larger than an aperture of the Wehnelt cup; protecting the cathode and/or the Wehnelt cup against vacuum arc discharge energy currents when forming the three-dimensional article by providing the guard ring with a higher negative potential than the Wehnelt cup and cathode.
Charged Particle Gun and Charged Particle Beam System
An electron gun 901 capable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEM 900 are provided. The electron gun 901 is equipped with: a charged particle source 1; an extraction electrode 3 for extracting charged particles from the charged particle source 1 and allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structure 5 disposed in contact with the extraction electrode 3. The length-measuring SEM 900 is equipped with the electron gun 901 and a computer system 920 for controlling the electron gun 901.
Electron emitter device with integrated multi-pole electrode structure
A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more segmented electrodes, each surrounding one of the one or more emitters. Each of the one or more segmented electrodes has multiple electrode plates. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.