A plasma processing apparatus includes a chamber; a substrate support having a lower electrode, an electrostatic chuck, and a heater; a radio frequency power supply; a DC power supply; a first controller; and a second controller. The first controller controls the radio frequency power supply to supply a pulsed radio frequency power to the lower electrode periodically with a cycle defined by a first frequency, and controls the DC power supply to apply a pulsed negative voltage to the edge ring periodically with the cycle. The second controller includes a heater controller that controls the power by obtaining a resistance value of the heater from sample values of a current and a voltage supplied to the heater. The first frequency is different from a second frequency that is a sampling frequency of the sample value of the current and the sample value of the voltage in the second controller.

An assembly is provided including a manipulation device and a cooling unit. The manipulation device includes a holder for samples and a thermal mass member which is arranged in thermal contact with the holder. The manipulation device is configured to place the manipulation device in a heat exchange position wherein the in thermal mass member is in thermal contact with the cooling unit, and to move the manipulation device from the heat exchange position to a manipulation position wherein the thermal mass member is thermally separated from the cooling unit. An inspection apparatus of focused ion beam apparatus is also provided including such an assembly, and a method of using such an assembly.

A sample transfer device (100) for receiving a sample inside the sample transfer device (100) and for transferring the sample to a processing or analysing unit includes a connection opening (110) defining a transfer path (114) along which the sample is to be transferred from a loading position (120) of the sample inside the sample transfer device (100) through the connection opening (110), a shutter (130) configured to block the connection opening (110) or to unblock the connection opening (110), and a shielding member (140) configured to be arranged between the connection opening (110) and the loading position (120) to protect the sample from an incoming gas stream when the shutter (130) unblocks the connection opening (110).

A method for processing a semiconductor structure includes: a substrate is provided, which has feature parts, in which an aspect ratio of the feature parts is greater than a preset aspect ratio, a barrier layer is disposed on tops of the feature parts, a hydrophilic layer is disposed on side walls of the feature parts, and there are particulate impurities on a surface of the hydrophilic layer; at least one cleaning treatment to the substrate is performed, in which the cleaning treatment includes: initial water vapor is introduced to the side walls of the feature parts, and a cooling treatment is performed to liquefy the initial water vapor adhering to a surface of the hydrophilic layer into water which carries the particulate impurities and flows into grooves; and a heating treatment is performed to evaporate the water into water vapor which carries the particulate impurities and escapes.

A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; cooling the deposition region by contacting the sample with a cyro-nanomanipulator tool in an area adjacent to the deposition region; injecting a deposition precursor gas into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with a charged particle beam column and focusing the charged particle beam on the sample; and scanning the focused electron beam across the localized region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region

Methods of introducing a small molecule into a crystal of a macromolecule, of obtaining a microcrystal having a macromolecule and a small molecule from a crystal of the macromolecule, of determining a structural model for a complex having a macromolecule and a small molecule, of identifying a small molecule that complexes with a macromolecule, and of screening a library of small molecules for their binding to a macromolecule are disclosed.

A method for temperature measurement used in an RF processing apparatus for semiconductor includes generating by electrodes an RF signal sequence having multiple discontinuous RF signals that are separated by a time interval; and generating a temperature sensing signal by a thermal sensor during the time interval.

A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

Provided is a sample loading method of loading a cooled sample into a sample exchange chamber of a charged particle beam apparatus includes: attaching the sample container in which a sample and liquid nitrogen are accommodated to the sample exchange chamber via a gate valve; evacuating a space between a liquid surface of the liquid nitrogen and the gate valve in a state in which the gate valve is closed; discharging the liquid nitrogen in the sample container after the space between the liquid surface of the liquid nitrogen and the gate valve has been evacuated; evacuating a space in the sample container after the liquid nitrogen in the sample container has been discharged; and opening the gate valve after the space in the sample container has been evacuated.

A method of processing a substrate includes: a placement step of placing the substrate on an electrostatic chuck set to have a predetermined temperature; a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck; a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less; and a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck.