The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions.

The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions.

A method of preparing a specimen in a dual-beam charged particle microscope having: an ion beam column, that can produce an ion beam that propagates along an ion axis; an electron beam column, that can produce an electron beam that propagates along an electron axis,
comprising the following steps: Providing a precursor sample on a sample holder; Using said ion beam to cut a furrow around a selected portion of said sample; Attaching a manipulator needle to said portion, severing said portion from the rest of said sample, and using the needle to perform a lift-out of the portion away from the rest of the sample,
particularly comprising: Configuring the manipulator needle to have multiple degrees of motional freedom, comprising at least: Eucentric tilt about a tilt axis that passes through an intersection point of said ion and electron axes and is perpendicular to said electron axis; Rotation about a longitudinal axis of the needle; Whilst maintaining said portion on said needle, using said ion beam to machine at least one surface of said portion, so as to create said specimen; Whilst maintaining said portion on said needle, inspecting it with said electron beam, for at least two different values of said rotation.

A charged particle beam apparatus includes a charged particle beam column for irradiating a sample with a charged particle beam, and a sample stage unit for moving the sample relative to the charged particle beam column. The sample stage unit includes a rotary stage section having a base portion and a rotary mover rotatable about a rotary axis relative to the base portion. A rotary connector is disposed coaxially with and rotatable about the rotary axis and fitted between the base portion and the rotary mover for electrically connecting wirings between relatively rotating elements. A connection electrode is disposed on the sample stage unit in electrical connection with the rotary connector. In the charged particle beam apparatus, the sample is able to be rapidly placed and replaced.

An apparatus for measuring a semiconductor device includes a beam irradiating unit configured to irradiate a first beam to a semiconductor substrate, a stage configured to receive the semiconductor substrate thereon and which is configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate, by a first angle to the horizontal plane and a second angle that is different from the first angle, a detector configured to receive a second beam generated by reflecting the first beam to the semiconductor substrate at the first angle and to receive a third beam generated by reflecting the first beam to the semiconductor substrate at the second angle, and an arithmetic operation unit configured to generate a 3D image of the semiconductor substrate using the second beam and the third beam received by the detector.

A method of preparing a specimen in a dual-beam charged particle microscope having: an ion beam column, that can produce an ion beam that propagates along an ion axis; an electron beam column, that can produce an electron beam that propagates along an electron axis,
comprising the following steps: Providing a precursor sample on a sample holder; Using said ion beam to cut a furrow around a selected portion of said sample; Attaching a manipulator needle to said portion, severing said portion from the rest of said sample, and using the needle to perform a lift-out of the portion away from the rest of the sample,
particularly comprising: Configuring the manipulator needle to have multiple degrees of motional freedom, comprising at least: Eucentric tilt a about a tilt axis that passes through an intersection point of said ion and electron axes and is perpendicular to said electron axis; Rotation about a longitudinal axis of the needle; Whilst maintaining said portion on said needle, using said ion beam to machine at least one surface of said portion, so as to create said specimen; Whilst maintaining said portion on said needle, inspecting it with said electron beam, for at least two different values of said rotation.

Disclosed herein is a charged particle beam apparatus. The apparatus includes a charged particle beam column irradiating a sample with a charged particle beam, a sample stage unit moving the sample relative to the charged particle beam column, the sample stage unit including a rotary stage section having a base portion and a rotary mover rotating about a rotary axis relative to the base portion, a rotary connector placed coaxially with the rotary axis and fitted between the base portion and the rotary mover, and a first connection electrode disposed on the sample stage unit in electrical connection with the rotary connector. In the charged particle beam apparatus, the sample is able to be rapidly placed and replaced.

An apparatus for measuring a semiconductor device includes a beam irradiating unit configured to irradiate a first beam to a semiconductor substrate, a stage configured to receive the semiconductor substrate thereon and which is configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate, by a first angle to the horizontal plane and a second angle that is different from the first angle, a detector configured to receive a second beam generated by reflecting the first beam to the semiconductor substrate at the first angle and to receive a third beam generated by reflecting the first beam to the semiconductor substrate at the second angle, and an arithmetic operation unit configured to generate a 3D image of the semiconductor substrate using the second beam and the third beam received by the detector.

The present disclosure relates to apparatus and methods for assessing samples using a plurality of charged particle beams. In one arrangement, at least a subset of a beam grid of a plurality of charged particle beams and respective target portions of a sample surface are scanned relative to each other to process the target portions. Signal charged particles from the sample are detected to generate detection signals. A sample surface topographical map is generated that represents a topography of the sample surface by analyzing the detection signals.

The present invention relates to a diffractometer for charged-particle crystallography of a crystalline sample, in particular for electron crystallography of a crystalline sample. The diffractometer comprises a charged-particle source for generating a charged-particle beam along a charged-particle beam axis, a charged-particle-optical system for manipulating the charged-particle beam such as to irradiate the sample with the charged-particle beam and a charged-particle detection system at least for collecting a diffraction pattern of the sample based on the beam of charged-particles transmitted through the sample. The diffractometer further comprises a sample holder for holding the sample and a manipulator operatively coupled to the sample holder for positioning the sample relative to the beam axis. The manipulator comprises a rotation stage for tilting the sample holder with respect to the incident charged-particle beam around a tilt axis, and a multi-axes translation stage for moving the sample holder at least in a plane perpendicular to the tilt axis. The multi-axes translation stage is operatively coupled between the sample holder and the rotation stage such that the multi-axes translation stage is in a rotational system of the rotation stage and the sample holder is in a moving system of the multi-axes translation stage.