A detection circuit for accurately detecting a very small foreign material and an inspection/measurement device using the same are provided. The inspection/measurement device includes: an irradiation section that irradiates a laser beam to a surface of a specimen; and a detection section that detects scattered light from the surface of the specimen and generates a detection signal. The detection section includes: a photon counting sensor that outputs M output signals from photo-detecting elements of N pixels (M and N are natural numbers, and M<N); M current-voltage conversion sections that execute current-voltage conversion on the output signals of the photon counting sensor respectively; a voltage application section that applies reference voltages to the current-voltage conversion sections; and a detection signal generation section that generates a detection signal on the basis of the outputs of the current-voltage conversion sections.

A charged particle beam device includes a deflection unit that deflects a charged particle beam released from a charged particle source to irradiate a sample, a reflection plate that reflects secondary electrons generated from the sample, and a control unit that controls the deflection unit based on an image generated by detecting the secondary electrons reflected from the reflection plate. The deflection unit includes an electromagnetic deflection unit that electromagnetically scans with the charged particle beam by a magnetic field and an electrostatic deflection unit that electrostatically scans with the charged particle beam by an electric field. The control unit controls the electromagnetic deflection unit and the electrostatic deflection unit, superimposes an electromagnetic deflection vector generated by the electromagnetic scanning and an electrostatic deflection vector generated by the electrostatic scanning, and controls at least a trajectory of the charged particle beam.

A charged particle beam device includes a deflection unit that deflects a charged particle beam released from a charged particle source to irradiate a sample, a reflection plate that reflects secondary electrons generated from the sample, and a control unit that controls the deflection unit based on an image generated by detecting the secondary electrons reflected from the reflection plate. The deflection unit includes an electromagnetic deflection unit that electromagnetically scans with the charged particle beam by a magnetic field and an electrostatic deflection unit that electrostatically scans with the charged particle beam by an electric field. The control unit controls the electromagnetic deflection unit and the electrostatic deflection unit, superimposes an electromagnetic deflection vector generated by the electromagnetic scanning and an electrostatic deflection vector generated by the electrostatic scanning, and controls at least a trajectory of the charged particle beam.

A radiation detector for position-resolved detection of radiation comprises at least one sensor tile with a front side facing incident radiation, and a back side opposite the front side. The sensor tile comprises a sensor material sensitive to the radiation. A front electrode is arranged on the front side of the sensor tile. A braking layer is arranged on the front electrode and at least partly covers the front electrode, for decelerating electrons in the incident radiation. A set of contacts of electrically conducting material is arranged on the back side of the sensor tile and in contact with the sensor material, thereby defining sensor pixels. At least one ASIC comprises a set of readout circuits in electrical connection with the contacts, each readout circuit being configured to process a signal received from the sensor pixel the readout circuit is electrically connected to. Each readout circuit of the set is configured to provide an output signal representative of the radiation incident in the corresponding sensor pixel.

An embodiment of the invention relates to a SEM enabling a surface analysis of a sample at a high throughput. The SEM has an electron gun, an irradiation unit, and a detector. The detector, as a first structure, includes an MCP, an anode, and a dynode. The dynode is set at a potential higher than a potential of an output face of the MCP and the anode is set at a potential higher than that of the dynode. The anode is disposed on the dynode side with respect to an intermediate position between the output face of the MCP and the dynode. The anode has an aperture for letting electrons from the output face of the MCP pass toward the dynode.