An ion implantation system and method that selectively varies an ion beam energy to a workpiece in sequential passes thereof in front of the beam. The implantation system has an ion source for generating the ion beam and an acceleration/deceleration stage for varying the energy of the ion beam based on an electrical bias supplied to the acceleration deceleration stage. A workpiece support is provided immediately downstream of the acceleration/deceleration stage to support a workpiece through the selectively varied energy ion beam, and can be thermally controlled to control a temperature of the workpiece during the variation of energy of the beam. The energy can be varied while the workpiece is positioned in front of the beam, and a controller can control the electrical bias to control the variation in energy of the ion beam, where a plurality of process recipes can be attained during a single positioning of the workpiece on the workpiece support.

Electron beam modulation in response to optical pump pulses applied to a sample is measured using SPAD elements. Individual detection events are used to form histograms of numbers of events in time bins associated with pump pulse timing. The histograms can be produced at a SPAD array, simplifying data transfer. In some examples, two SPAD arrays are stacked and a coincidence circuit discriminates signal events from noise events by determining corresponding events are detected within a predetermined time window.

A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.

A method for operating a particle beam microscope comprises scanning an object using a particle beam and detecting electrons and x-ray radiation when scanning an object using a particle beam. Improved x-ray radiation information can be generated by combining weighted x-ray radiation information items according to the formula

[00001]$S_e\left({\stackrel{.fwdarw.}{r}}_i\right)=\underset{j}{.Math.}w\left(i,j\right).Math.S\left({\stackrel{.fwdarw.}{r}}_j\right),$

wherein S({right arrow over (r)}.sub.i) is the detected x-ray radiation intensity assigned to a location {right arrow over (r)}.sub.i. The following holds true for the weights, for example:

[00002]$w\left(i,j\right)=e^{-{\left({\stackrel{.fwdarw.}{r}}_i-{\stackrel{.fwdarw.}{r}}_j\right)}^2/{\sigma }_f^2}.Math.e^{-{(I\left({\stackrel{.fwdarw.}{r}}_i\right)-I({\stackrel{.fwdarw.}{r}}_{}}^{}}$

A method for operating a multi-beam particle beam microscope includes: scanning a multiplicity of particle beams over an object; directing electron beams emanating from impingement locations of the particle beams at the object onto an electron converter; detecting first signals generated by impinging electrons in the electron converter via a plurality of detection elements of a first detection system during a first time period; detecting second signals generated by impinging electrons in the electron converter via a plurality of detection elements of a second detection system during a second time period; and assigning to the impingement locations the signals which were detected via the detection elements of the first detection system during the first time period, for example on the basis of the detection signals which were detected via the detection elements of the second detection system during the second time period.

Electron beam modulation in response to optical pump pulses applied to a sample is measured using SPAD elements. Individual detection events are used to form histograms of numbers of events in time bins associated with pump pulse timing. The histograms can be produced at a SPAD array, simplifying data transfer. In some examples, two SPAD arrays are stacked and a coincidence circuit discriminates signal events from noise events by determining corresponding events are detected withing a predetermined time window.

An in-vacuum light sensor system, including a light sensor assembly comprising a photocathode configured for converting an impinging photon to a photoelectron, a semiconductor diode configured for multiplying the photoelectron impinging thereon, and a housing including vacuum-compatible materials configured for being placed in a vacuum chamber. The housing is configured for housing the photocathode and the semiconductor diode and for propagation of the photoelectron from the photocathode to the semiconductor diode. An electrical biasing subassembly is configured for electrically biasing at least the photocathode and the semiconductor diode, and the vacuum chamber is configured for positioning the light sensor apparatus therein.

An apparatus to determine occurrence of an anomalous plasma event occurring at or near a process station of a multi-station integrated circuit fabrication chamber is disclosed. In particular embodiments, optical emissions generated responsive to the anomalous plasma event may be detected by at least one photosensor of a plurality of photosensors. A processor may cooperate with the plurality of photosensors to determine that the anomalous plasma event has occurred at or near by a particular process station of the multi-station integrated circuit fabrication chamber.

A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

A shield device (100) is for covering a radiation window (502). The shield device (100) includes a support structure (102) with an opening (106), and a flexible foil (104) covering at least the opening (106) of the support structure (102). The foil (104) includes carbon nanotubes in a form of a network (202) and the foil (104) is configured to allow radiation to pass through the foil (104) at least partly and to prevent objects (302) to pass through the foil (104). A radiation arrangement (500) includes a shield device (100), and a method is for producing a shield device (100) for a radiation window (502).