Systems and methods for reducing the buildup of charge during the investigation of samples using charged particle beams, according to the present disclosure include irradiating a first portion of a sample during a first time period, wherein the irradiating the first portion of the sample causes a gradual accumulation of net charge in the first portion of the sample, generating imaging data based on emissions resultant from irradiating the first portion of the sample, and then irradiating a second portion of a sample holder for a second time period. The methods may further includes iteratively repeating the irradiation of the first portion and the second portion during imaging of the sample region. When more than one region of interest on the sample is to be investigated, the method may also include continuing to image additional portions of the sample by iteratively irradiating a region of interest on the sample and a corresponding portion of the sample holder.

A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

The disclosure relates to charged-particle multi-beam columns and multi-beam column arrays. In one arrangement, a sub-beam defining aperture array forms sub-beams from a beam of charged particles. A collimator array collimates the sub-beams An objective lens array projects the collimated sub-beams onto a sample. A detector detects charged particles emitted from the sample. Each collimator is directly adjacent to one of the objective lenses. The detector is provided in a plane down-beam from the sub-beam defining aperture array.

A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.

A detector for use in a charged particle device for an assessment tool to detect signal particles from a sample, the detector including a substrate, the substrate including: a semiconductor element configured to detect signal particles above a first energy threshold; and a charge-based element configured to detect signal particles below a second energy threshold.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.

Systems and methods for reducing the buildup of charge during the investigation of samples using charged particle beams, according to the present disclosure include irradiating a first portion of a sample during a first time period, wherein the irradiating the first portion of the sample causes a gradual accumulation of net charge in the first portion of the sample, generating imaging data based on emissions resultant from irradiating the first portion of the sample, and then irradiating a second portion of a sample holder for a second time period. The methods may further includes iteratively repeating the irradiation of the first portion and the second portion during imaging of the sample region. When more than one region of interest on the sample is to be investigated, the method may also include continuing to image additional portions of the sample by iteratively irradiating a region of interest on the sample and a corresponding portion of the sample holder.

An FIB system includes an ion source for producing the ion beam, a lens system which includes an objective lens and which is operative to focus the ion beam onto a sample such that secondary electrons are produced from the sample, a detector for detecting the secondary electrons, and a controller for controlling the lens system. The controller operates i) to provide control so that a focus of the ion beam is varied by directing the ion beam onto the sample, ii) to measure a signal intensity from the secondary electrons produced from the sample during the variation of the strength of the objective lens, iii) to adjust the focus of the ion beam, iv) to acquire a secondary electron image containing an image of a trace of a spot, and v) to correct the deviation of the field of view of the ion beam.

When a high-performance retarding voltage applying power supply cannot be employed in terms of costs or device miniaturization, it is difficult to sufficiently adjust focus in a high acceleration region within a range of changing an applied voltage, and identify a point at which a focus evaluation value is maximum. To address the above problems, a scanning electron microscope is provided including: an objective lens configured to converge an electron beam emitted from an electron source; a current source configured to supply an excitation current to the objective lens; a negative-voltage applying power supply configured to form a decelerating electric field of the electron beam on a sample; a detector configured to detect charged particles generated when the electron beam is emitted to the sample; and a control device configured to calculate a focus evaluation value from an image formed according to an output of the detector. The control device calculates a focus evaluation value when an applied voltage is changed, determines whether to increase or decrease an excitation current according to an increase or a decrease of the focus evaluation value, and supplies the excitation current based on a result of the determination.