An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

A device for detecting energy beam is provided. The device comprises a carbon nanotube structure, a support structure and an infrared detector. The carbon nanotube structure comprises a plurality of carbon nanotubes, and an extending direction of each carbon nanotube is parallel to a direction of an energy beam to be detected. The support structure is configured to support the carbon nanotube structure, and make a portion of the carbon nanotube structure suspended in the air. The infrared detector is located below and spaced apart from the carbon nanotube structure. The infrared detector is configured to detect a temperature of a suspended portion of the carbon nanotube structure, and image according to a temperature distribution of the carbon nanotube structure. A method for detecting energy beam is also provided.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

A radio frequency (RF) generator includes a RF power source configured to output an RF power signal, and a controller coupled to the RF power source. The controller is configured to generate a pulse to modulate the RF power signal of the RF power source. The pulse includes one or more state transitions. The controller is further configured to receive a sync signal indicative of one or more operating characteristics or parameters of another RF generator, and adjust at least one of the state transitions of the pulse to synchronize the state transition with a defined phase of the received sync signal. Other example RF generators, RF power delivery systems including one or more RF generators, and control methods for adjusting a state transition of a pulse to synchronize the state transition with a defined phase of a sync signal are also disclosed.

A device for detecting energy beam is provided. The device comprises a carbon nanotube structure, a support structure and an infrared detector. The carbon nanotube structure comprises a plurality of carbon nanotubes, and an extending direction of each carbon nanotube is parallel to a direction of an energy beam to be detected. The support structure is configured to support the carbon nanotube structure, and make a portion of the carbon nanotube structure suspended in the air. The infrared detector is located below and spaced apart from the carbon nanotube structure. The infrared detector is configured to detect a temperature of a suspended portion of the carbon nanotube structure, and image according to a temperature distribution of the carbon nanotube structure. A method for detecting energy beam is also provided.

A measurement method includes: (a) measuring an emission intensity for each wavelength of light detected from a plasma generated in a plasma processing apparatus at each different exposure time by a light receiving element; (b) specifying, with respect to each of a plurality of different individual wavelength ranges that constitutes a predetermined wavelength range, a distribution of the emission intensity in the individual wavelength range measured at an exposure time at which an emission intensity of a predetermined wavelength included in the individual wavelength range becomes an emission intensity within a predetermined range; (c) selecting a distribution of the emission intensity in the individual wavelength range from the distribution of the emission intensity specified in (b); and (d) outputting the distribution of the emission intensity selected for each individual wavelength range.

In a method of controlling a plasma beam of a plasma etcher a flow rate controller of the plasma etcher is set to generate one or more flow rates of an etching gas corresponding to one or more plasma beams of the plasma etcher. The emitted light generated by plasma discharge corresponding to the one or more plasma beams of the plasma etcher is monitored. The flow rate controller is calibrated based on the one or more flow rates and a corresponding emitted light of the plasma discharge.

A plasma discharge detection system detects undesirable plasma discharge events within a semiconductor process chamber. The plasma discharge detection system includes one or more cameras positioned around the semiconductor process chamber. The cameras capture images from within the semiconductor process chamber. The plasma discharge detection system includes a control system that receives the images from the cameras. The control system analyzes the images and detects plasma discharge within the semiconductor process chamber based on the images. The control system can adjust a semiconductor process in real time responsive to detecting the plasma discharge.

The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy. A charged particle beam writing method includes virtually dividing a writing region of the substrate so as to have a predetermined mesh size and calculating a pattern density distribution representing an arrangement ratio of the pattern for each mesh region, calculating a dose distribution using the pattern density distribution, calculating an irradiation amount distribution using the pattern density distribution and the dose distribution, calculating a fogging charged particle amount distribution, calculating a charge amount distribution due to direct charge and a charge amount distribution due to fogging charge, calculating a position shift of a writing position based on the charge amount distribution due to direct charge and the charge amount distribution due to fogging charge, correcting an irradiation position using the position shift, and irradiating the corrected irradiation position with the charged particle beam with which a potential of a surface of the substrate becomes higher than a potential of a bottom surface of ae potential regulation member.

Embodiments disclosed herein include sensor devices and methods of using the sensor devices. In an embodiment, a sensor device comprises a substrate, a support extending up from the substrate, and a resonator mechanically coupled to the support. In an embodiment, the sensor device further comprises an antenna that is configured to electromagnetically couple with the resonator, wherein the antenna is connected to a transmission line in the substrate.