A multi-beam charged particle inspection system and a method of operating a multi-beam charged particle inspection system for wafer inspection can provide high throughput with high resolution and high reliability. The method and the multi-beam charged particle beam inspection system can be configured to extract from a plurality of sensor data a set of control signals to control the multi-beam charged particle beam inspection system and thereby maintain the imaging specifications including a movement of a wafer stage during the wafer inspection task.

Provided is a charged particle beam device that enables, even if a visual field includes therein a plurality of regions having different secondary electron emission conditions, the setting of appropriate energy filter conditions adapted to each of these regions. The charged particle beam device is equipped with a detector for detecting charged particles obtained on the basis of scanning, over a sample, a charged particle beam emitted from a charged particle source, and an energy filter for filtering by energy the charged particles emitted from the sample. Index values are determined for the plurality of regions contained within the scanning region of the charged particle beam, and, for each of a plurality of energy filter conditions, differences are calculated between the plurality of index values and the reference index values that have been set for each of the plurality of regions.

A scanning electron microscope includes a management computer that generates an irradiation control command of an electron beam, a control block that generates a control signal on the basis of the irradiation control command, and a beam irradiation control device that controls an irradiation direction of the electron beam on the basis of the control signal. The management computer generates the irradiation control command on the basis of a scan type selected by a user and scan parameters set by the use

The present disclosure provides a system and method for controlling a dynamically controllable ultrawide-amplitude and high-response ion source, including: resolving dwell time of ion beam machining during iterative machining; selecting an appropriate velocity V of a movable shaft of a machine tool according to a calculation result of the dwell time; and dynamically calculating process parameters of an ion source according to an initial surface error of an optical component and the velocity V of the movable shaft, and generating a corresponding numerical control (NC) program to machine the optical component. The present disclosure can control the removal function of the ion beam polishing in real time, improve the precision and efficiency of the ion beam polishing, and further reduce the requirement on a movement system of the machine tool and the depth of a damaged layer.

A particle beam apparatus is used for imaging, processing and/or analyzing an object. A computer program product may be used to facilitate imaging, processing and/or analyzing the object. A magnification may be chosen from a first magnification range of the particle beam apparatus by driving a first amplifier unit and a second amplifier unit. If it is established that there are prerequisites which would actually result in the particle beam apparatus being switched to a different magnification from a second magnification range, the switching is avoided by feeding an analog amplifier signal from an amplifier unit to a scanning unit of the particle beam apparatus, guiding the particle beam over the object using the scanning unit, and imaging, processing and/or analyzing the object with the particle beam.

A method of operating a particle beam device for imaging, analyzing and/or processing an object may be carried out, for example, by a particle beam device. The method may include: identifying at least one region of interest on the object; defining: (i) an analyzing sequence for analyzing the object, (ii) a processing sequence for processing the object by deformation and (iii) an adapting sequence for adapting the at least one region of interest depending on the processing sequence and/or on the analyzing sequence; processing the object by deformation according to the processing sequence and/or analyzing the object according to the analyzing sequence; adapting the at least one region of interest according to the adapting sequence; and after or while adapting the at least one region of interest, imaging and/or analyzing the at least one region of interest using a primary particle beam being generated by a particle beam generator.

The present disclosure provides a system and method for controlling a dynamically controllable ultrawide-amplitude and high-response ion source, including: resolving dwell time of ion beam machining during iterative machining; selecting an appropriate velocity V of a movable shaft of a machine tool according to a calculation result of the dwell time; and dynamically calculating process parameters of an ion source according to an initial surface error of an optical component and the velocity V of the movable shaft, and generating a corresponding numerical control (NC) program to machine the optical component. The present disclosure can control the removal function of the ion beam polishing in real time, improve the precision and efficiency of the ion beam polishing, and further reduce the requirement on a movement system of the machine tool and the depth of a damaged layer.

Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a system for processing a substrate, comprising: a remote plasma source including a supply terminal configured to connect to a power source and an output configured to deliver RF power to a plasma block of the remote plasma source for creating a plasma; and a controller connected to the supply terminal of the remote plasma source and configured to determine, based on a predictive model of the remote plasma source, whether a power at the supply terminal is equal to a predetermined threshold during processing of a substrate, wherein the predictive model includes a correlation of remote plasma performance with delivered RF power at the output, and to control the processing of the substrate based on a determination of the predetermined threshold being met to control processing of the substrate.

According to one embodiment of the present disclosure, there is provided a substrate processing system for processing a plurality of substrates including: a processor configured to perform a process on the substrate; a transport device configured to repeatedly transport the plurality of substrates with respect to the processor; and a controller configured to control the process of the substrate in the processor, wherein the controller is configured to: execute the process based on a process recipe, which is a control program for executing the process; and set an offset time, which is a function corresponding to a number of the substrates processed by the processor or a function corresponding to a parameter equivalent to the number of the processed substrates, with respect to a step time for a step of the process recipe.

An aberration value estimator has a learned estimation model for estimating an aberration value set based on a Ronchigram. In a machine learning sub-system, a simulation is repeatedly executed while changing a simulation condition, and calculated Ronchigrams are generated in a wide variety and in a large number. By machine learning using the calculated Ronchigrams, the learned estimation model is generated.