An integrated transmission electron microscope comprising multiple electron sources for tuned beams of ultrafast, scanning probe, and parallel illumination in varied beam energies can be alternated within sub-microseconds onto a sample with dynamic ‘transient state’ processes to acquire atomic-scale structural/chemical data with site specificity. The various electron sources and condenser optics enable high-resolution imaging, high-temporal resolution imaging, and chemical imaging, using fast-switching magnets to direct the different electron beams onto a single maneuverable objective pole piece where the sample resides. Such multimodal in situ characterization tools housed in a single microscope have the potential to revolutionize materials science.

An apparatus is provided, which includes a source, a holder, and a conductive member. The source generates an electron beam and the holder is configured to receive a sample. The conductive member is arranged between the source and the holder at a first position or a second position. The electron beam impinges on the sample to provide a first analysis reading when the conductive member is at the first position, and the electron beam impinges on the conductive member to emanate an X-ray beam on the sample to provide a second analysis reading when the conductive member is at the second position.

An integrated transmission electron microscope comprising multiple electron sources for tuned beams of ultrafast, scanning probe, and parallel illumination in varied beam energies can be alternated within sub-microseconds onto a sample with dynamic transient state processes to acquire atomic-scale structural/chemical data with site specificity. The various electron sources and condenser optics enable high-resolution imaging, high-temporal resolution imaging, and chemical imaging, using fast-switching magnets to direct the different electron beams onto a single maneuverable objective pole piece where the sample resides. Such multimodal in situ characterization tools housed in a single microscope have the potential to revolutionize materials science.

A system and method for imaging a sample having a complex structure (such as an integrated circuit) implements two modes of operation utilizing a common electron beam generator that produces an electron beam within a chamber. In the first mode, the electron beam interacts directly with the sample, and backscattered electrons, secondary electrons, and backward propagating fluorescent X-rays are measured. In the second mode, the electron beam interrogates the sample via X-rays generated by the electron beam within a target that is positioned between the electron beam generator and the sample. Transmitted X-rays are measured by a detector within the vacuum chamber. The sample is placed on a movable platform to precisely position the sample with respect to the electron beam. Interferometric and/or capacitive sensors are used to measure the position of the sample and movable platform to provide high accuracy metadata for performing high resolution three-dimensional sample reconstruction.

A system and method for imaging a sample having a complex structure (such as an integrated circuit) implements two modes of operation utilizing a common electron beam generator that produces an electron beam within a chamber. In the first mode, the electron beam interacts directly with the sample, and backscattered electrons, secondary electrons, and backward propagating fluorescent X-rays are measured. In the second mode, the electron beam interrogates the sample via X-rays generated by the electron beam within a target that is positioned between the electron beam generator and the sample. Transmitted X-rays are measured by a detector within the vacuum chamber. The sample is placed on a movable platform to precisely position the sample with respect to the electron beam. Interferometric and/or capacitive sensors are used to measure the position of the sample and movable platform to provide high accuracy metadata for performing high resolution three-dimensional sample reconstruction.

An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.

A method of performing an electron multi-beam inspection of a semiconductor substrate includes generating a primary electron beam; focusing the primary electron beam to generate a focused electron beam including an optimized beam illumination area; generating sub-beams from the focused electron beam by causing the focused electron beam to impinge on a beam splitter such that the optimized beam illumination area is smaller than a total area of the beam splitter; and blocking a first plurality of the sub-beams by causing the sub-beams to impinge on a mask including a blocking area and an open area, such that a second plurality of the sub-beams passes through the mask, wherein the open area is located within the optimized beam illumination area. According to various embodiments, the method further includes dynamically controlling a size and shape of the blocking area and the open area by controlling the plurality of MEMS shutters.

An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.

A measurement device includes a radiation unit that houses inside a charged particle radiation source; a detection unit that houses inside a detection device that detects charged particle radiation radiated from the charged particle radiation source and that is arranged with a clearance between the detection unit and the radiation unit; and a magnetic field generator that generates a magnetic field from a side of one of the radiation unit and the detection unit toward a side of the other between the radiation unit and the detection unit and, in the radiation unit, an output port that allows the charged particle radiation radiated from the charged particle radiation source to be output to outside is formed in a position opposed to the detection unit, and, in the detection unit, an incidence port that allows the charged particle radiation to be incident on the inside is formed in a position opposed to the output port.