A microfluidic cell system to measure proton concentration in a fluid sample. The microfluidic cell system includes: a first microchip and a second microchip dimensioned to permit electron beam scanning of a fluid sample; a first membrane attached to the first microchip; a second membrane attached to the second microchip, the first membrane and the second membrane being disposed adjacent to one another with a space for the fluid sample therebetween, and the first membrane and the second membrane including a region of the fluid sample in which an electron beam is scanned; a first electrode patterned onto the first membrane and positioned a first distance from the region; a second electrode patterned onto the first microchip and positioned a second distance from the region, the first distance being less than the second distance; and a potentiostat in communication with the first electrode and the second electrode.

The present disclosure relates to a detection system, and, more particularly, to system for detection of passive voltage contrast and methods of use. The system includes a chamber; a stage provided within the chamber, configured to stage a target structure; an electron beam apparatus which is structured to emit an e-beam toward the stage; and a laser source which emits a laser signal toward the stage, at a same area as the e-beam.

A method for analyzing an integrated circuit includes: applying an electric test pattern to the IC; delivering a stream of primary electrons to a back side of the IC on an active region to a transistor of interest, the active region including active structures such as transistors of the IC; detecting light resulting from cathodoluminescence initiated by secondary electrons in the IC; and analyzing the detected light regarding a correlation with the electric test pattern applied to the IC. A system for analyzing an IC is provided.

A method for analyzing an integrated circuit includes: applying an electric test pattern to the IC; delivering a stream of primary electrons to a back side of the IC on an active region to a transistor of interest, the active region including active structures such as transistors of the IC; detecting light resulting from cathodoluminescence initiated by secondary electrons in the IC; and analyzing the detected light regarding a correlation with the electric test pattern applied to the IC. A system for analyzing an IC is provided.

An inspection method of an embodiment includes: positively charging a substrate on which a pattern is formed by irradiating the substrate with a first electron beam; generating a secondary electron on a surface of the substrate by irradiating the substrate with a second electron beam; detecting the generated secondary electron; and inspecting the pattern based on the detected secondary electron, in which when the substrate is irradiated with the first electron beam, the first electron beam is made incident on the substrate at an incident angle different from an incident angle of the second electron beam with respect to the substrate, while positions of an emission source of the first electron beam and the substrate are being moved relatively.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

The present disclosure relates to a detection system, and, more particularly, to system for detection of passive voltage contrast and methods of use. The system includes a chamber; a stage provided within the chamber, configured to stage a target structure; an electron beam apparatus which is structured to emit an e-beam toward the stage; and a laser source which emits a laser signal toward the stage, at a same area as the e-beam.

A charged particle system may include a first charged particle beam source provided on a first axis, and a second charged particle beam source provided on a second axis. There may also be provided a deflector arranged on the first axis. The deflector may be configured to deflect a beam generated from the second charged particle beam source toward a sample. A method of operating a charged particle beam system may include switching between a first state and a second state of operating a deflector. In the first state, a first charged particle beam generated from a first charged particle beam source may be blanked and a second charged particle beam generated from a second charged particle beam source may be directed toward a sample. In the second state, the second charged particle beam may be blanked and the first charged particle beam may be directed toward the sample.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

Methods and systems for calibrating a transmission electron microscope are disclosed. A fiducial mark on the sample holder is used to identify known reference points so that a current collection area and a through-hole on the sample holder can be located. A plurality of beam current and beam area measurements are taken, and calibration tables are extrapolated from the measurements for a full range of microscope parameters. The calibration tables are then used to determine electron dose of a sample during an experiment at a given configuration.