A scanning electron microscope is provided that is capable of displaying an image highly visible for a user when an image is displayed by visualization by combining morphological image information with component image information. A scanning electron microscope 1 for observing a sample S by irradiating the sample S with an electron ray, the scanning electron microscope 1 includes: a morphological calculation unit 24 configured to calculate intensity data of at least one of secondary electrons and reflected electrons obtained from the sample S to obtain morphological image information of the sample S; a component calculation unit 34 configured to calculate spectrum data of X-ray energy obtained from the sample S to obtain component image information of the sample S; and a display unit 50 configured to display an image visualized by combining the morphological image information with the component image information, wherein the morphological calculation unit 24 is configured to change the morphological image information in accordance with one or more morphological image parameters input by a user, and the component calculation unit 34 is configured to change the component image information in accordance with one or more component image parameters input by a user.

Provided is an electrostatic deflection convergence-type energy analyzer having a wide acceptance angle and high two-dimensional convergence performance, is capable of imaging two-dimensional real-space images and emission angle distributions, and enables two-dimensional convergence and imaging at 90 deflection with respect to an incident direction. Outer electrodes and inner electrodes are disposed along the shapes of two rotation bodies formed on the inside and the outside for a common rotation axis. The inner-surface shape of the outer electrode has a tapered shape becoming smaller in diameter toward both ends. The outer-surface shape of the inner electrodes has a tapered shape becoming smaller in diameter toward both ends. An electron incident hole and exit hole are formed in each of the outer electrodes at both ends on the rotation axis. The outer and the inner electrodes have applied thereto voltages for accelerating and decelerating electrons in proportion to the energy of incident electrons.

A plasma etching system includes a reaction chamber configured to react plasma with a substrate to perform an etching process, and a chamber port providing visual access to an internal area of the reaction chamber. A chamber port assembly is disposed in the chamber port and is configured to generate an electric field in response to receiving a voltage. The plasma etching system can also repel plasma ions by forming an electrically conductive transparent window-protective film on surface of a data collection window, and disposing the data collection window in a chamber port of a plasma etching system. A voltage can then be applied to the electrically conductive transparent window-protective film to generate an electric field. A plasma etching process can then be performed in the reaction chamber and the plasma ions produced during the etching process are repelled away from the data collection window via the electric field.