An assembly is provided including a manipulation device and a cooling unit. The manipulation device includes a holder for samples and a thermal mass member which is arranged in thermal contact with the holder. The manipulation device is configured to place the manipulation device in a heat exchange position wherein the in thermal mass member is in thermal contact with the cooling unit, and to move the manipulation device from the heat exchange position to a manipulation position wherein the thermal mass member is thermally separated from the cooling unit. An inspection apparatus of focused ion beam apparatus is also provided including such an assembly, and a method of using such an assembly.

A nanoscale positioning system for positioning a positionable component includes a motion platform including a first end, a second end, a shuttle positioned between the first end and the second end and configured to support the positionable component, a flexure member, and a fluid passage extending through the flexure member from the first end to the second end of the motion platform, and a pressure controller coupled to the motion platform and fluidically connected to the fluid passage, wherein the pressure controller is configured to selectably provide a fluid pressure in the fluid passage to flex the flexure member whereby the shuttle is displaced along a motion axis of the motion platform.

This disclosure provides systems, methods, and apparatus related to graphene. In one aspect, a method includes submerging a frame support in an etching solution that is contained in a container. A growth substrate, a graphene sheet disposed on the growth substrate, and a primary support disposed on the graphene sheet is placed on a surface of the etching solution. The growth substrate is dissolved in the etching solution to leave the graphene sheet and the primary support floating on a surface of the etching solution. The etching solution in the container is replaced with a washing solution. The washing solution is removed from the container so that the graphene sheet becomes disposed on the frame support.

An electron beam detection apparatus for a semiconductor device and an electron beam detection assembly are disclosed, the electron beam detection apparatus including a stage, which is configured to carry and hold the semiconductor device at a top surface of the stage, and is translatable in two directions orthogonal to each other, an aiming device, configured to determine a position of the semiconductor device in a coordinate system of the electron beam detection apparatus by capturing an image of the semiconductor device, the aiming device provided with a first field of view and a first optical axis, and an electron beam detection device, configured to detect an emergent electron beam exiting the semiconductor device by projecting an electron beam to the semiconductor device, the electron beam detection device provided with a second field of view and a second optical axis which is not consistent with the first optical axis.

Provided is a sample loading method of loading a cooled sample into a sample exchange chamber of a charged particle beam apparatus includes: attaching the sample container in which a sample and liquid nitrogen are accommodated to the sample exchange chamber via a gate valve; evacuating a space between a liquid surface of the liquid nitrogen and the gate valve in a state in which the gate valve is closed; discharging the liquid nitrogen in the sample container after the space between the liquid surface of the liquid nitrogen and the gate valve has been evacuated; evacuating a space in the sample container after the liquid nitrogen in the sample container has been discharged; and opening the gate valve after the space in the sample container has been evacuated.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

A sample holder for holding a sample carrier carrying a sample includes a sample carrier fixing element. The sample carrier fixing element includes a first section configured, when in a first position, to fix the sample carrier to the sample holder, and, when in a second position, to release the sample carrier or to provide access to an area where the sample carrier is to be located. The sample carrier fixing element also includes a second section different from the first section, the second section being operable such that upon operation of the second section the first section switches from the first position into the second position or from the second position into the first position.

An electron beam detection apparatus for a semiconductor device and an electron beam detection assembly are disclosed, the electron beam detection apparatus including a stage, which is configured to carry and hold the semiconductor device at a top surface of the stage, and is translatable in two directions orthogonal to each other, an aiming device, configured to determine a position of the semiconductor device in a coordinate system of the electron beam detection apparatus by capturing an image of the semiconductor device, the aiming device provided with a first field of view and a first optical axis, and an electron beam detection device, configured to detect an emergent electron beam exiting the semiconductor device by projecting an electron beam to the semiconductor device, the electron beam detection device provided with a second field of view and a second optical axis which is not consistent with the first optical axis.

A retainer is placed on a retainer holding portion formed on a sample chip worktable. With an operation of a button, a take-out support mechanism operates. That is, an upthrust pin moves upward. With this process, an orientation of a sample chip stored in the retainer is changed from a horizontal orientation to an inclined orientation. A plurality of openings through which the upthrust pin passes are formed in the retainer.

An electrode structure for guiding and, for example, for splitting a beam of charged particles, for example an electron beam, along a longitudinal path has multipole electrode arrangements that are spaced apart from one another along the longitudinal path and that have DC voltage electrodes. The electrode arrangements are configured to generate static multipole fields centered around the path in transverse planes oriented perpendicular to the longitudinal path, wherein the field strengths of the static multipole fields in the transverse planes each have a local minimum at the location of the path and increase as the distance from the location of the path increases. Field directions of the static multipole fields vary periodically with a period length along the path so that the particles propagating along the path are subjected to an inhomogeneous alternating electric field due to their intrinsic movement and experience a transverse return force towards the longitudinal path on average over time.