A method of raster scanning a surface of an object using a particle beam comprises determining a basic set of raster points within a surface; determining a surface portion of the surface of the object, wherein the surface portion is to be raster scanned; ordering a set of raster points of the basic set located within the surface portion; and scanning of the surface portion by directing the particle beam onto the raster points of the ordered set in an order corresponding to an order of the raster points in the ordered set from the outside to the inside, i.e. starting from the boundary of the surface portion towards its center, or in the reverse order, i.e. from the inside to the outside.

The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.

A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of: a1) providing an image of at least a portion of the photomask, b1) determining a geometric shape of a defect in the image as a repair shape, c1) subdividing the repair shape into a number of n pixels in accordance with a first rasterization, d1) subdividing the repair shape into a number of m pixels in accordance with a second rasterization, the second rasterization emerging from a subpixel displacement of the first rasterization, e1) providing an activating particle beam and a process gas at each of the n pixels of the repair shape in accordance with the first rasterization, and f1) providing the activating particle beam and the process gas at each of the m pixels of the repair shape in accordance with the second rasterization.

A method of evaluating a region of a sample that includes two or more sub-regions adjacent to each other that have different milling rates. The method can include: scanning a focused ion beam over the region during a single scan frame such that the ion beam is scanned over a first sub-region of the region having a first milling rate at a first scan rate and then scanned over a second sub-region of the region having a second milling rate at a second scan rate, where the second milling rate is faster than the first milling rate and second scan rate is faster than the first scan rate; and repeating the scanning process a plurality of times to etch the region to a desired depth.

An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

A multi charged particle beam apparatus irradiates a substrate placed on a stage with a multi charged particle beam through an illumination optical system including a plurality of components, and an objective lens successively. In one embodiment, an optical system adjustment method for the multi charged particle beam apparatus includes measuring positional deviation amounts of a plurality of individual beams included in the multi charged particle beam at two or more different heights in an optical axis direction of a measurement surface or an imaging position of the multi charged particle beam, calculating a normalized position difference based on the two or more heights and the positional deviation amounts, the normalized position difference being an illumination system aberration equivalent amount of the illumination optical system, and adjusting a set value for at least one of the plurality of components using a value of the normalized position difference.

An image acquisition method is provided for use in an electron microscope for scanning a sample by an electron probe and acquiring a scanned image. The method includes the steps of: raster scanning a region of the sample under observation with the electron probe and obtaining a first scanned image; raster scanning the region under observation with the electron probe and obtaining a second scanned image; and superimposing the first and second scanned images over each other. In the step of obtaining the first scanned image, each one of scan lines is drawn with the electron probe in a first direction and then moved in a second direction perpendicular to the first direction. In the step of obtaining the second scanned image, each one of the scan lines is drawn with the electron probe in the first direction and then moved in a third direction opposite to the second direction.

A method of evaluating a region of a sample that includes two or more sub-regions adjacent to each other that have different milling rates. The method can include: scanning a focused ion beam over the region during a single scan frame such that the ion beam is scanned over a first sub-region of the region having a first milling rate at a first scan rate and then scanned over a second sub-region of the region having a second milling rate at a second scan rate, where the second milling rate is faster than the first milling rate and second scan rate is faster than the first scan rate; and repeating the scanning process a plurality of times to etch the region to a desired depth.

An image acquisition method is provided for use in an electron microscope for scanning a sample by an electron probe and acquiring a scanned image. The method includes the steps of: raster scanning a region of the sample under observation with the electron probe and obtaining a first scanned image; raster scanning the region under observation with the electron probe and obtaining a second scanned image; and superimposing the first and second scanned images over each other. In the step of obtaining the first scanned image, each one of scan lines is drawn with the electron probe in a first direction and then moved in a second direction perpendicular to the first direction. In the step of obtaining the second scanned image, each one of the scan lines is drawn with the electron probe in the first direction and then moved in a third direction opposite to the second direction.

According to various embodiments, a method for vaporizing a vaporization material by means of an electron beam may include the following: generating a first deflection pattern having a first power density at least on an end face of a rod-shaped vaporization material; and, subsequently, generating a second deflection pattern having a second power density on a portion of an outer edge of the rod-shaped vaporization material and a portion of an inner edge of a ring crucible, which encloses the rod-shaped vaporization material, wherein the second power density is greater than the first power density.