There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.

The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

An electron beam source including a cathode, an anode, a means for deflecting an electron beam over a target surface and at least one vacuum pump, the electron beam source further including a contraction area arranged between the anode and the means for deflecting the electron beam where a hole in the contraction area is aligned with a hole in the anode with respect to the cathode, a first vacuum pump is arranged between the contraction area and the anode and a second vacuum pump is arranged above the anode, a gas inlet is provided between the contraction area and the means for deflecting the electron beam, wherein a first crossover of the electron beam is arranged between the cathode and the anode and a second crossover is arranged at or in close proximity to the contraction area.

A treatment system and process includes a ribbon beam ion source that is configured to implant ions into a product to modify a portion of the product; multiple means of controlling the temperature of the product; the means including radiative conduction, gas conduction to a heatsink by means of a gas cushion, adjustment of the ion beam density at the product, adjustment of the ion beam intensity at the product and ion beam acceleration parameters, and adjustment of the ion dose to the product b; and a product movement system configured to move the product through the treatment system past the ribbon beam ion source. The treatment system further includes a system controller configured to control at least one the following: the gas cushion system, the ribbon beam ion source, the temperature control system, the heatsink, and the product movement system.

A method includes forming a resist pattern, the resist pattern having trenches oriented lengthwise along a first direction and separated by resist walls along both the first direction and a second direction perpendicular to the first direction. The method further includes loading the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction, and tilting the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method further includes rotating the resist pattern around the axis to a first position; implanting ions into the resist walls with the resist pattern at the first position; rotating the resist pattern around the axis by 180 degrees to a second position; and implanting ions into the resist walls with the resist pattern at the second position.

Methods and devices for altering the power of a lens, such as an intraocular lens, are disclosed. In one method, the lens comprises a single polymer matrix containing crosslinkable pendant groups, wherein the polymer matrix increases in volume when crosslinked. The lens does not contain free monomer. Upon exposure to ultraviolet radiation, crosslinking causes the exposed portion of the lens to increase in volume, causing an increase in the refractive index. In another method, the lens comprises a polymer matrix containing photobleachable chromophores. Upon exposure to ultraviolet radiation, photobleaching causes a decrease in refractive index in the exposed portion without any change in lens thickness. These methods avoid the need to wait for diffusion to occur to change the lens shape and avoid the need for a second exposure to radiation to lock in the changes to the lens.

Method for producing a sterilized foam web, wherein the method comprising the steps of preparing a wet foam (1),feeding the wet foam (1) to a head box (2, 11),distributing the wet foam by the head box (2, 11),treating the wet foam (1) with electron beam radiation (3a, 3b, 3c) to immobilize and sterilize the wet foam (1),receiving the electron beam treated foam on a moving wire (4) to form a foam web (6, 13), pressing and the foam web (6, 13),and drying the foam web (6, 13).

An article composed of sintered particles is produced by depositing ligand-containing particles on a substrate, then scanning the substrate with an electron beam that generates sufficient surface and subsurface heating to substantially eliminate the ligands and melt or sinter the particles into a cohesive film with superior charge carrier properties. The particles are sintered or melted together to form a polycrystalline layer that is substantially ligand-free to form, for example, a film such as a continuous polycrystalline film. The scanning operation is conducted so as to heat treat a controllably localized region at and below a surface of the particles by selecting a rate of deposited energy at the region to exceed a rate of conduction away from the substrate.

A method includes forming a resist pattern, the resist pattern having trenches oriented lengthwise along a first direction and separated by resist walls along both the first direction and a second direction perpendicular to the first direction. The method further includes loading the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction, and tilting the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method further includes rotating the resist pattern around the axis to a first position; implanting ions into the resist walls with the resist pattern at the first position; rotating the resist pattern around the axis by 180 degrees to a second position; and implanting ions into the resist walls with the resist pattern at the second position.

A method includes forming a resist pattern over a structure, the resist pattern having a trench surrounded by first resist walls extending lengthwise along a first direction and second resist walls extending lengthwise along a second direction perpendicular to the first direction. The method includes loading the structure and the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction of the ion implanter. The method includes tilting the structure and the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method includes first rotating the structure and the resist pattern around the axis to a first position. The method includes first implanting ions into the resist pattern with the structure and the resist pattern at the first position.

A single beam plasma or ion source apparatus, including multiple and different power sources, is provided. An aspect of the present apparatus and method employs simultaneous excitation of an ion source by DC and AC, or DC and RF power supplies. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape.