A technique for treating the surface of one or more accelerator cavities of an accelerator module. This technique relies on the use of a particle beam to at least partially scan the inner surface of the one or more accelerator cavities. Such a technique offers a treatment solution that is more suitable for accelerator cavities, with better control of the implantation parameters.

A heater assembly that that is effective at maintaining heating lamps at acceptable temperatures is disclosed. The heater assembly utilizes radiative heat transfer to transfer unwanted heat buildup in the heating lamps to a cooling base. One or more high emissivity films are disposed between the heating lamps and the cooling base to facilitate heat transfer. Further, a reflective coating is applied to a portion of the heating lamps to reflect heat away from the cooling base. The heater assembly may be utilized in a high vacuum environment as it does not rely on convective cooling.

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

A beam control method is provided that can be implemented with any hardware system for imaging and/or cutting such as SEM/FIB/HIM or charged particle lithography which alleviates the deposited energy overlap between pixels to increase resolution and precision while reducing damage. The method includes scanning a workpiece with e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging or FIB in a reduced or sub-sampled pattern, to reduce beam overlap, which can include the step of scanning the beam ensuring that there is the largest difference in time and space between consecutive beam locations.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including integrated circuit dies; measuring a position of the wafer by measuring a positions of an outer edge of the integrated circuit dies with a camera; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

Semiconductor devices and methods of manufacturing semiconductor devices are described herein. A method includes implanting neutral elements into a dielectric layer, an etch stop layer, and a metal feature, the dielectric layer being disposed over the etch stop layer and the metal feature being disposed through the dielectric layer and the etch stop layer. The method further includes using a germanium gas as a source for the neutral elements and using a beam current above 6.75 mA to implant the neutral elements.

An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

An ion source is provided. The ion source may include an ion source chamber, and a cathode disposed in the ion source chamber and configured to emit electrons to generate a plasma within the ion source chamber, the cathode comprising a refractory metal, wherein the refractory metal comprises a macrocrystalline structure.