An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

A charged particle beam lithography apparatus, includes a plurality of multiple-beam sets, each of which including a plurality of irradiation sources each generating an independent charged particle beam, a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate, and a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object; a plurality of common deflection amplifiers, arranged for each multiple-beam set, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set; a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each irradiation source; and one or more multiple-beam clusters including the plurality of multiple-beam sets.

A charged particle beam lithography apparatus, includes a plurality of multiple-beam sets, each of which including a plurality of irradiation sources each generating an independent charged particle beam, a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate, and a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object; a plurality of common deflection amplifiers, arranged for each multiple-beam set, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set; a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each irradiation source; and one or more multiple-beam clusters including the plurality of multiple-beam sets.

A charged particle beam lithography apparatus, includes a plurality of multiple-beam sets, each of which including a plurality of irradiation sources each generating an independent charged particle beam, a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate, and a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object; a plurality of common deflection amplifiers, arranged for each multiple-beam set, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set; a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each irradiation source; and one or more multiple-beam clusters including the plurality of multiple-beam sets.

A charged particle beam lithography apparatus, includes a plurality of multiple-beam sets, each of which including a plurality of irradiation sources each generating an independent charged particle beam, a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate, and a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object; a plurality of common deflection amplifiers, arranged for each multiple-beam set, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set; a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each irradiation source; and one or more multiple-beam clusters including the plurality of multiple-beam sets.

One embodiment relates to an apparatus for electron beam lithography. The apparatus includes an array of cold cathode electron sources for generating an array of electron beams, and driver circuitry underlying the array of electron sources. The driver circuitry is configured to selectively blank individual electron beams so as to create a patterned array of electron beams. The apparatus further includes an imaging system configured to focus and demagnify the patterned array of electron beams and a movable stage for holding a target substrate. The movable stage is configured to translate the target substrate under the patterned array of electron beams. A computer may be configured to send drive signals to the driver circuitry to cause a pattern to be written onto the target substrate to roll across the array in synchronization with the translation of the target substrate. Other embodiments, aspects and feature are also disclosed.