Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.

Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.

Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

There is provision of a thermal spraying method of a component for a plasma processing apparatus performed by a plasma spraying apparatus including a nozzle and a plasma generating unit having a common axis with the nozzle. The method includes a step of injecting, with a plasma generating gas, feedstock powder having a particle diameter of 15 μm or less from a tip of the nozzle to the plasma generating unit, a step of generating a plasma from the plasma generating gas in the plasma generating unit, by using electric power not more than 50 kW, and a step of thermal spraying the feedstock powder liquefied by the plasma at the component through a mask, such that a surface of a resin layer of the component is covered with the feedstock powder.

A roll to roll fabrication apparatus includes: a vacuum chamber having an installation chamber and a process chamber; a preprocessing unit in the installation chamber to process a surface of a film which is transferred to enhance a film characteristic in a subsequent CVD process; a process drum in the process chamber to wind the film thereon; a process treatment unit in the process chamber to form a layer by performing a CVD process on the film wound on the process drum; and a plurality of heaters in the installation chamber and the process chamber to gradually increase a temperature of the film wound on the process drum to prevent application of a thermal impact to the film due to the high-temperature process drum.

There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.

A method and apparatus for reducing bevel peeling during and after plasma enhanced chemical vapor deposition (PECVD) of a material layer on a substrate is disclosed. In one embodiment a method of processing a substrate includes positioning a substrate in a processing volume of a processing chamber, plasma treating the surface of the substrate with a treatment plasma formed of a treatment gas, chucking the substrate to the substrate support, and depositing a material layer onto the surface of the substrate by exposing the surface of the substrate to a deposition plasma. Here, the treatment gas is substantially free of carbon, silicon, or metal deposition precursors, and an RF power used to form the treatment plasma is less than about 1.42 Watts per cm.sup.2 of substrate surface (W/cm.sup.2). The deposition plasma is formed from one or a combination of a carbon, silicon, or metal precursors, and an RF power used to ignite and maintain the deposition plasma is more than about 2.12 W/cm.sup.2.

A method for performing plasma enhanced chemical vapor deposition (PECVD) using a dual frequency process to deposit a silane-based oxide film on a substrate includes arranging the substrate on a substrate support in a processing chamber configured to perform PECVD and supplying PECVD process gases into the processing chamber. The process gases include a first process gas including silicon and a second process gas including an oxidant. The method further includes, while supplying the PECVD process gases into the processing chamber, generating a dual frequency plasma within the processing chamber to deposit the silane-based oxide film on the substrate by supplying a first radio frequency (RF) voltage to the processing chamber, and supplying a second RF voltage to the processing chamber. The first RF voltage is supplied at a first frequency and the second RF voltage is supplied at a second frequency that is different than the first frequency.

Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.

The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.