A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

An apparatus to decouple RF signals from input signal conductors of a process chamber includes at least a first switch to decouple an energy storage element from an active element within a process station. In particular embodiments, while the first switch is in an opened position, a second switch located between a current generator and energy storage element is closed, thereby permitting the current generator to charge the energy storage element. In response to the energy storage element attaining a predetermined voltage, the first switch may be closed, and the second switch may be opened, thereby permitting current to be discharged from the energy storage element to the active element. In certain embodiments, the first and second switches are not permitted to simultaneously operate in a closed position, thereby preventing RF from being coupled from the process station to the current generator.

The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber and an ion source in the chamber. The ion source can include an outlet. The ion source can be configured to generate a particle beam. The semiconductor device manufacturing system can further include a grid structure proximate to the outlet of the ion source and configured to manipulate the particle beam. A first portion of the grid structure can be electrically insulated from a second portion of the grid structure.

A semiconductor process system includes a process chamber with a lid. The system includes a heater positioned on the lid and a controller configured to control the heater. The controller operates the heater to provide a selected temperature distribution of the lid.

A mounting table is provided. The mounting table includes an electrostatic chuck configured to mount thereon a target object and attract and hold the target object using an electrostatic force, and a gas supply line configured to supply a gas to a gap between the target object mounted on the electrostatic chuck and the electrostatic chuck via the electrostatic chuck. The mounting table further includes at least one irradiation unit configured to irradiate light having a predetermined wavelength to the gas flowing through the gas supply line or to the gas supplied to the gap between the target object and the electrostatic chuck to ionize the gas.

A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.

An impedance matching circuit includes a radiofrequency terminal and a series circuit connected to the radiofrequency terminal, wherein the series circuit comprises at least one reactance and at least one switching element having a drive input. A drive circuit is connected to the drive input and a coupler is connected to the drive circuit so as to an enable signal input. The impedance matching circuit enables short switching times and low losses in the at least one switching element.

Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp.sup.2 to sp.sup.3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

There is provided a gas analyzer apparatus including: a sample chamber which is equipped with a dielectric wall structure and into which only sample gas to be measured is introduced; a plasma generation mechanism that generates plasma inside the sample chamber, which has been depressurized, using an electric field and/or a magnetic field applied through the dielectric wall structure; and an analyzer unit that analyzes the sample gas via the generated plasma. By doing so, it is possible to provide a gas analyzer apparatus capable of accurately analyzing sample gases, even those including corrosive gas, over a long period of time.

In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.