A method for processing a semiconductor structure includes: a substrate is provided, which has feature parts, in which an aspect ratio of the feature parts is greater than a preset aspect ratio, a barrier layer is disposed on tops of the feature parts, a hydrophilic layer is disposed on side walls of the feature parts, and there are particulate impurities on a surface of the hydrophilic layer; at least one cleaning treatment to the substrate is performed, in which the cleaning treatment includes: initial water vapor is introduced to the side walls of the feature parts, and a cooling treatment is performed to liquefy the initial water vapor adhering to a surface of the hydrophilic layer into water which carries the particulate impurities and flows into grooves; and a heating treatment is performed to evaporate the water into water vapor which carries the particulate impurities and escapes.

A substrate is held in a substrate holder and accommodated in a treatment chamber. A positive electrode panel is arranged opposite to a surface of the substrate. Process gas is sent from a blower panel, toward the positive electrode panel and the substrate. A positive electrode of a high-frequency power source is connected to the positive electrode panel, and a negative electrode of the high-frequency power source is connected to the blower panel, to apply a high-frequency voltage. The process gas passes between the positive electrode panel and the blower panel which is the negative electrode, so that plasma is generated. The generated plasma removes contaminants on the surface of the substrate.

In one embodiment, an ion extraction optics for extracting a plurality of ion beams is provided. The ion extraction optics may include, an extraction plate, the extraction plate defining a cut-out region, the cut-out region being elongated along a first direction. The extraction apparatus may include a slidable insert, the slidable insert disposed to overlap the cut-out region, and slidably movable with respect to the extraction plate, along the first direction, wherein the slidable insert and cut-out region define a first aperture and a second aperture.

In one embodiment, an ion extraction optics for extracting a plurality of ion beams is provided. The ion extraction optics may include, an extraction plate, the extraction plate defining a cut-out region, the cut-out region being elongated along a first direction. The extraction apparatus may include a slidable insert, the slidable insert disposed to overlap the cut-out region, and slidably movable with respect to the extraction plate, along the first direction, wherein the slidable insert and cut-out region define a first aperture and a second aperture.

In one embodiment, an ion extraction optics for extracting a plurality of ion beams is provided. The ion extraction optics may include, an extraction plate, the extraction plate defining a cut-out region, the cut-out region being elongated along a first direction. The extraction apparatus may include a slidable insert, the slidable insert disposed to overlap the cut-out region, and slidably movable with respect to the extraction plate, along the first direction, wherein the slidable insert and cut-out region define a first aperture and a second aperture.

This disclosure describes designs and methods for via cleaning, peeling protective film, and providing mild surface roughening and cleaning of a computer chip. A system may include a first electrode configured to generate plasma associated with cleaning vias by etching a residual material associated with smearing; an electrostatic stage configured to generate an electrostatic force associated with peeling the dielectric protective film from the semiconductor; and a stage on which the semiconductor is positioned while the electrostatic stage peels the dielectric protective film from the semiconductor, wherein the plasma is further associated with roughening a surface of the semiconductor after peeling the dielectric protective film from the semiconductor.

A substrate is held in a substrate holder and accommodated in a treatment chamber. A positive electrode panel is arranged opposite to a surface of the substrate. Process gas is sent from a blower panel, toward the positive electrode panel and the substrate. A positive electrode of a high-frequency power source is connected to the positive electrode panel, and a negative electrode of the high-frequency power source is connected to the blower panel, to apply a high-frequency voltage. The process gas passes between the positive electrode panel and the blower panel which is the negative electrode, so that plasma is generated. The generated plasma removes contaminants on the surface of the substrate.

Disclosed herein are fasteners for use in a semiconductor wafer process chamber. The fasteners may be used to secure hardware. The fasteners may include outermost surfaces that are provided by multiple different coatings, e.g., a hard coating and a dry lubricant coating. The hard coating may provide outermost surfaces of the fastener that are exposed to a plasma when a remote plasma clean is performed and may be used to prevent particle generation when the fastener is subjected to the remote plasma clean. The dry lubricant coating may provide outermost surfaces of a threaded portion of the fastener and may be used to prevent galling.

A semiconductor device manufacturing method of embodiments includes: forming a first conductive film containing indium on a substrate; forming a first insulating film; forming a second conductive film; forming a second insulating film; forming an opening penetrating the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film; forming a third insulating film in the opening so as to be in contact with bottom and side surfaces of the opening; removing the third insulating film at a bottom of the opening to expose the first conductive film at the bottom of the opening; performing a first treatment using a first gas containing silicon or a second treatment using a second gas containing oxygen; and forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure.

Provided are a substrate processing apparatus and a substrate processing method, and more specifically, a substrate processing apparatus and a substrate processing method for easily cleaning an unnecessary thin film deposited on a lower surface and edge area of a substrate without inverting the substrate.