The present invention relates to a device for generating a dielectric barrier discharge for treatment of an object (1) to be activated with non-thermal atmospheric pressure plasma, comprising a dielectric working chamber (2) which has a wall (3) of a dielectric material and which encloses a working space (4), wherein a metallization (6) is applied to an outer side (5) of the wall (3) facing away from the working space (4), wherein the working space (4) is an open volume, and a high-voltage source (9) which is configured to apply a high voltage to the metallization (6) or to the object (1) to be activated when the object (1) to be activated is in the working space (4). According to a further aspect, the invention relates to a method of treatment of an object (1) to be activated with a non-thermal atmospheric pressure plasma.

Sterilisation apparatus comprising a sterilisation instrument configured to be inserted through the instrument channel of a surgical scoping device and a withdrawal device for withdrawing the sterilisation instrument from the instrument channel at a predetermined rate. The sterilisation instrument comprises an elongate probe having a probe tip with a first electrode and a second electrode arranged to produce an electric field from received RF and/or microwave frequency EM energy. In operation the instrument may disinfect an inner surface of the instrument channel by emitting energy whilst being withdrawn through the channel.

A method of etching a metal includes performing at least two cycles of an etch process. A cycle of the etch process includes: performing a surface modification on an exposed surface of a metal layer over a substrate, performing a hydrogen treatment on the metal layer, and performing a cleaning treatment on the metal layer. The hydrogen treatment forms a layer of reaction products on the metal layer. The cleaning treatment removes the layer of reaction products.

[Problem]

To provide a laminate body in which a resin base member and a metal deposition film are brought into firmly close contact with each other.

[Solution]

The laminate body manufacturing method includes a desorption step S10, an introduction step S20, a deposition step S30, and a coating step S40. In the desorption step S10, a hydrophobic surface of resin is irradiated with plasma to desorb at least some of the atoms constituting the resin from the surface. In the introduction step S20, the surface of the resin subjected to the desorption step S10 is irradiated with hydroxyl radicals to introduce a hydroxyl group onto the surface of the resin. In the deposition step S30, a metal film is deposited on the surface of the resin subjected to the introduction step S20. In the coating step S40, the surface of the metal film is coated with a metal layer formed of the same metal as the metal forming the metal film.

A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has multiple grounding electrodes, grounding pads located at its edges, and a polymer thin film including multiple areas each covering only one grounding electrode. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a shadow mask below the poling source, and a Z-elevator to raise the workpiece carrier toward the shadow mask and poling source. When the workpiece in the workpiece carrier is raised to contact the underside of the shadow mask, multiple openings of the shadow mask expose only the corresponding multiple thin film areas of the workpiece to the plasma; meanwhile, conductive grounding terminals on the underside of the shadow mask electrically connect the grounding pads of the workpiece with carrier electrodes on the workpiece carrier, to ground the workpiece.

Disclosed is a substrate treating apparatus that includes an index module including a plurality of load ports on each of which a carrier having a substrate received therein is placed and a transfer frame in which an index robot that transfers the substrate is installed, a process module that is connected with the index module and that includes process chambers in each of which the substrate is treated, and a substrate treating unit that is provided in the index module and that treats the substrate, the substrate treating unit being provided along a direction in which the plurality of load ports are arranged.

A system and method for manufacturing a lattice structure of ionized particles on a substrate, wherein the process may be improved by controlling the number of ionized particles that are ejected from an ionizer and directed to a substrate, and wherein the ionized particles are disposed on the substrate, thereby enabling the creation of a lattice structure that may be as thin as a single layer of ionized particles.

An inductively coupled plasma dry etch process can obtain a deep etching profile in a piezoelectric material, such as lithium niobate, with minimum roughness and substantially vertical sidewalls. In addition, quality metal masks can be achieved by employing a hydrogen-plasma treatment prior to the processing steps. Periodic interruption steps can be included in the plasma dry etch procedure followed by a chemical cleaning between each cycle to avoid thermal effect and minimize byproduct redeposition during the long etching process. A deep etching profile in a piezoelectric material, such as a Sc.sub.xAl.sub.1-xN film, can be attained with minimum roughness and substantially vertical sidewalls using wet etching and a patterned mask, where the patterned mask is formed using another mask.

A plasma processing device may include first and second processing devices. The first processing device may include a first chamber, a first exhaust pump which provides, into the first chamber, a first pressure equal to or higher than 0.1 Pa and equal to or lower than 0.3 Pa while depressurizing the first chamber, a first holding unit which holds resin, a first gas introduction unit which introduces, into the first chamber, first gas for desorbing at least a part of atoms constituting the resin from a surface of the resin when turned into plasma, and a first plasma generation unit which turns the first gas into plasma at the first pressure. The second processing device may include a grounded second chamber, a second exhaust pump which provides, into the second chamber, a second pressure equal to or higher than 30% and equal to or lower than 50% of the first pressure at which the desorption step has been performed while depressurizing the second chamber, a second holding unit which holds the resin processed in the first chamber and to which a first DC voltage may be applied, a second gas introduction unit which introduces, into the second chamber, second gas to generate hydroxyl radicals by being turned into plasma, and a second plasma generation unit which turns the second gas into plasma at the second pressure and to which a second DC voltage higher than the first DC voltage may be applied.

Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.