H01J2237/339

PRODUCTION APPARATUS AND PRODUCTION METHOD FOR FINE PARTICLES
20170274344 · 2017-09-28 ·

A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

Method and device for production of acetylene using plasma technology
09758444 · 2017-09-12 ·

Method and device for the production of acetylene using plasma technology, wherein a gas containing at least one type of hydrocarbon is fed into a non-thermal plasma of a plasma source.

Method and device for the plasma-catalytic conversion of materials
10702847 · 2020-07-07 ·

Methods and devices are provided for the plasma-catalytic conversion of materials to produce chemical base materials. The methods and devices allow a plurality of chemical processes to be carried out in a plasma-catalytic manner to produce chemical base materials from simple raw materials (for example methane and biogas) with an improved selectivity and energy balance. A hydrocarbon-containing or other starting material is reacted under the action of a plasma to produce chemical base materials, or such a starting material is converted into an intermediate product in a first step under the action of a plasma, and the intermediate product is converted into the desired base material in a subsequent step. The devices for carrying out plasma-catalytic reactions are characterized by a jet pump arranged downstream of the plasma reactor, a tubular recipient (reaction chamber) having a diameter of at least 4 cm, or a catalyst-containing wall of the recipient.

Production apparatus and production method for fine particles

A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

GAS-FLOW-ENGINEERED PLASMA REACTOR FOR EFFICIENTLY PRODUCING FIXED NITROGEN PRODUCTS

Aspects of the present disclosure involve a plasma reactor system that includes a gas-flow-engineered reactor to more efficiently produce fixed nitrogen products. In some instances, the gas-flow-engineered reactor may include a gas vortex-inducing input mechanism and/or a quenching mechanism integrated or otherwise associated with the plasma reactor system.

Polycrystalline silicon sputtering target

Provided is a polycrystalline silicon target produced by a melting method. In the polycrystalline silicon sputtering target, the average amount of nitride or carbide grains having a size of 100 m or more for samples of 100100 mm taken from an arbitrary plane of the target is less than three. Also provided is a method of producing a polycrystalline silicon sputtering target. The method is characterized in that a silicon ingot is produced by melting silicon as a raw material with an electron beam and pouring the molten silicon into a crucible heated at 90 C. or more, and the resulting ingot is machined into a target. The present invention has focused on polycrystalline silicon produced by a melting method, and an object of the present invention is to provide a polycrystalline silicon sputtering target having high quality by reducing the presence of silicon nitride and silicon carbide and to provide a polycrystalline silicon sputtering target having a high bending strength by devising the production process.