H01J29/467

Devices having an electron emitting structure

Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.

Laser polycrystallization apparatus

A laser polycrystallization apparatus including: a light source for emitting a laser beam; a diffraction grating for receiving the laser beam from the light source, changing a path and a magnitude of the received laser beam, and outputting the changed laser beam; a light split portion for splitting the laser beam received from the diffraction grating; and a light superposition portion for superposing the split laser beams received from the light split portion and irradiating the superposed split laser beams to a substrate. An angle between the laser beam irradiated to an incidence surface of the diffraction grating from the light source and a line substantially perpendicular to an emission surface of the diffraction grating is an acute angle.

DEVICES HAVING AN ELECTRON EMITTING STRUCTURE
20190189383 · 2019-06-20 ·

Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.

Devices having an electron emitting structure

The disclosure relates to an image capture device comprising an electron receiving construct and an electron emitting construct, and further comprising an inner gap providing an unobstructed space between the electron emitting construct and the electron receiving construct. The disclosure further relates to an x-ray emitting device comprising an x-ray emitting construct and an electron emitting construct, said x-ray emitting construct comprising an anode, the anode being an x-ray target, wherein the x-ray emitting device may comprise an inner gap providing an unobstructed space between the electron emitting construct and the x-ray emitting construct. The disclosure further relates to an x-ray imaging system comprising an image capture device and an x-ray emitting device.

LASER POLYCRYSTALLIZATION APPARATUS
20180174836 · 2018-06-21 ·

A laser polycrystallization apparatus including: a light source for emitting a laser beam; a diffraction grating for receiving the laser beam from the light source, changing a path and a magnitude of the received laser beam, and outputting the changed laser beam; a light split portion for splitting the laser beam received from the diffraction grating; and a light superposition portion for superposing the split laser beams received from the light split portion and irradiating the superposed split laser beams to a substrate. An angle between the laser beam irradiated to an incidence surface of the diffraction grating from the light source and a line substantially perpendicular to an emission surface of the diffraction grating is an acute angle.

Field-emission device with improved beams-convergence

The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed therein.