Patent classifications
H01J3/26
Deceleration apparatus for ribbon and spot beams
A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.
Deceleration apparatus for ribbon and spot beams
A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.
Method and device for changing the direction of movement of a beam of accelerated charged particles
A method and a device for changing direction of movement of a beam of accelerated charged particles are based on the use of a curved channel which is made from a material that is able to be electrically charged, and formation of the same kind of charge on an inside surface of the channel wall as that of the particles. Maintenance of a condition that relates an energy and a charge of the particles to geometrical parameters of the channel is required, in particular, a radius R of curvature of a longitudinal axis thereof, and to electrical strength of the wall material. The beam can possibly be rotated through large angles without loss of intensity, significantly simplifying a design, and also reducing the mass and dimensions of all devices, particularly by obviating a need for magnets and supply voltage and control voltage sources for such devices.
Method and device for changing the direction of movement of a beam of accelerated charged particles
A method and a device for changing direction of movement of a beam of accelerated charged particles are based on the use of a curved channel which is made from a material that is able to be electrically charged, and formation of the same kind of charge on an inside surface of the channel wall as that of the particles. Maintenance of a condition that relates an energy and a charge of the particles to geometrical parameters of the channel is required, in particular, a radius R of curvature of a longitudinal axis thereof, and to electrical strength of the wall material. The beam can possibly be rotated through large angles without loss of intensity, significantly simplifying a design, and also reducing the mass and dimensions of all devices, particularly by obviating a need for magnets and supply voltage and control voltage sources for such devices.
Positioning apparatus for an electron beam
A positioning apparatus is provided for an electron beam of an electron tube, the apparatus including a first DC voltage circuit having a high potential difference and a second DC voltage circuit having a smaller potential difference, having in each case a first potential level and a second potential level, and a deflection module, which has two inputs and at least one deflection coil, wherein the at least one deflection coil is connected between the two inputs of the deflection module.
Charged particle beam writing apparatus and charged particle beam writing method
A charged particle beam writing apparatus includes a circuitry to set, when a charged particle beam is deflected to move between plural small regions by a deflector, plural first mesh regions obtained by virtually dividing a chip region into regions by length and width sizes same as those of each of the plural small regions; determine whether a shot figure having been assigned exists in each of the plural first mesh regions; a circuitry to perform, for the plural first mesh regions, merging of two or more adjacent first mesh regions; a circuitry to measure, for each of plural second mesh regions each obtained by merging, the number of first mesh regions each having been determined that an assigned shot figure exists therein; and a circuitry to generate a map for each chip, where measured number of first mesh regions with the shot figure is defined as a map value.
Charged particle beam apparatus
In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.
Charged particle beam apparatus
In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.
CHARGED PARTICLE BEAM APPARATUS
In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.
CHARGED PARTICLE BEAM APPARATUS
In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.