Patent classifications
H01J3/36
PERMANENT-MAGNET PARTICLE BEAM APPARATUS AND METHOD INCORPORATING A NON-MAGNETIC METAL PORTION FOR TUNABILITY
A permanent-magnet particle beam apparatus and method incorporating a non-magnetic portion for tunability are provided. The permanent-magnet particle beam apparatus includes a particle beam emitter that emits a charged particle beam, and includes a set of permanent magnets forming a magnetic field for controlling condensing of the charged particle beam. The permanent-magnet particle beam apparatus further includes a non-magnetic electrical conductor component situated with the set of permanent magnets to control a kinetic energy of the charged particle beam moving through the magnetic field.
Charged particle beam apparatus
In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.
Charged particle beam apparatus
In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.
CHARGED PARTICLE BEAM APPARATUS
In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.
CHARGED PARTICLE BEAM APPARATUS
In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.
Low temperature, photonically augmented electron source system
An electron source system utilizing photon enhanced thermionic emission to create a source of well controlled electrons for injection into a series of lenses so that the beam can be fashioned to meet the particular specification for a given use is disclosed. Because of the recent increased understanding and characterization of the bandgap in certain materials, a simplified system can now be realized to overcome the potential barrier at the surface. With this system, only low electric fields with moderate temperatures (500 C.) are required. The resulting system enables much easier focusing of the electron beam because the random component of the energy of the electrons is much lower than that of a conventional system. The system comprises an emitter of wide bandgap material, a first light source and a heating element wherein the heating element provides moderate warming to the wide bandgap material and the light source provides photonic excitation to the material, causing electrons to be emitted into an optical system to manipulate the emitted electrons.
Low temperature, photonically augmented electron source system
An electron source system utilizing photon enhanced thermionic emission to create a source of well controlled electrons for injection into a series of lenses so that the beam can be fashioned to meet the particular specification for a given use is disclosed. Because of the recent increased understanding and characterization of the bandgap in certain materials, a simplified system can now be realized to overcome the potential barrier at the surface. With this system, only low electric fields with moderate temperatures (500 C.) are required. The resulting system enables much easier focusing of the electron beam because the random component of the energy of the electrons is much lower than that of a conventional system. The system comprises an emitter of wide bandgap material, a first light source and a heating element wherein the heating element provides moderate warming to the wide bandgap material and the light source provides photonic excitation to the material, causing electrons to be emitted into an optical system to manipulate the emitted electrons.
LOW TEMPERATURE, PHOTONICALLY AUGMENTED ELECTRON SOURCE SYSTEM
An electron source system utilizing photon enhanced thermionic emission to create a source of well controlled electrons for injection into a series of lenses so that the beam can be fashioned to meet the particular specification for a given use is disclosed. Because of the recent increased understanding and characterization of the bandgap in certain materials, a simplified system can now be realized to overcome the potential barrier at the surface. With this system, only low electric fields with moderate temperatures (500 C.) are required. The resulting system enables much easier focusing of the electron beam because the random component of the energy of the electrons is much lower than that of a conventional system. The system comprises an emitter of wide bandgap material, a first light source and a heating element wherein the heating element provides moderate warming to the wide bandgap material and the light source provides photonic excitation to the material, causing electrons to be emitted into an optical system to manipulate the emitted electrons.
LOW TEMPERATURE, PHOTONICALLY AUGMENTED ELECTRON SOURCE SYSTEM
An electron source system utilizing photon enhanced thermionic emission to create a source of well controlled electrons for injection into a series of lenses so that the beam can be fashioned to meet the particular specification for a given use is disclosed. Because of the recent increased understanding and characterization of the bandgap in certain materials, a simplified system can now be realized to overcome the potential barrier at the surface. With this system, only low electric fields with moderate temperatures (500 C.) are required. The resulting system enables much easier focusing of the electron beam because the random component of the energy of the electrons is much lower than that of a conventional system. The system comprises an emitter of wide bandgap material, a first light source and a heating element wherein the heating element provides moderate warming to the wide bandgap material and the light source provides photonic excitation to the material, causing electrons to be emitted into an optical system to manipulate the emitted electrons.
Permanent-magnet particle beam apparatus and method incorporating a non-magnetic metal portion for tunability
A permanent-magnet particle beam apparatus and method incorporating a non-magnetic portion for tunability are provided. The permanent-magnet particle beam apparatus includes a particle beam emitter that emits a charged particle beam, and includes a set of permanent magnets forming a magnetic field for controlling condensing of the charged particle beam. The permanent-magnet particle beam apparatus further includes a non-magnetic electrical conductor component situated with the set of permanent magnets to control a kinetic energy of the charged particle beam moving through the magnetic field.