Provided is a charged particle beam device that enables, even if a visual field includes therein a plurality of regions having different secondary electron emission conditions, the setting of appropriate energy filter conditions adapted to each of these regions. The charged particle beam device is equipped with a detector for detecting charged particles obtained on the basis of scanning, over a sample, a charged particle beam emitted from a charged particle source, and an energy filter for filtering by energy the charged particles emitted from the sample. Index values are determined for the plurality of regions contained within the scanning region of the charged particle beam, and, for each of a plurality of energy filter conditions, differences are calculated between the plurality of index values and the reference index values that have been set for each of the plurality of regions.

Provided is a charged particle beam device that enables, even if a visual field includes therein a plurality of regions having different secondary electron emission conditions, the setting of appropriate energy filter conditions adapted to each of these regions. The charged particle beam device is equipped with a detector for detecting charged particles obtained on the basis of scanning, over a sample, a charged particle beam emitted from a charged particle source, and an energy filter for filtering by energy the charged particles emitted from the sample. Index values are determined for the plurality of regions contained within the scanning region of the charged particle beam, and, for each of a plurality of energy filter conditions, differences are calculated between the plurality of index values and the reference index values that have been set for each of the plurality of regions.

An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.

A method of reducing aberration comprises separating charged particles of a beam based on energy of the charged particles to form beamlets, each of the beamlets configured to include charged particles at a central energy level; and deflecting the beamlets so that beamlets having different central energy levels are deflected differently. An aberration corrector comprises a dispersive element configured to cause constituent parts of a beam (e.g. a charged particle beam) to spread apart based on energy; an aperture array configured to form beamlets from the spread apart beam; and a deflector array configured to deflect the beamlets differently based on central energy levels of particles that form the beamlets.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.

A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.

According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: an objective lens configured to image multiple primary electron beams on a substrate by using the multiple primary electron beams; a separator configured to have two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field and configured to separate multiple secondary electron beams emitted due to the substrate being irradiated with the multiple primary electron beams from trajectories of the multiple primary electron beams by the electric field and the magnetic field formed; a deflector configured to deflect the multiple secondary electron beams separated; a lens arranged between the objective lens and the deflector and configured to image the multiple secondary electron beams at a deflection point of the deflector; and a detector configured to detect the deflected multiple secondary electron beams.

An energy spectrometer with dynamic focus for a transmission electron microscope (TEM) is disclosed herein. An example energy spectrometer and TEM at least includes a charged particle column including a projection system arranged after a sample plane, the projection system is operated in a first configuration; an energy spectrometer coupled to the charged particle column to acquire one or more energy loss spectra. The energy spectrometer including a dispersive element, a bias tube, optics for magnifying the energy loss spectrum and for correcting aberrations, and a detector arranged conjugate to a spectrum plane of the energy spectrometer, wherein the energy spectrometer further includes an optical element electrically biased to refocus at least a portion of a spectrum onto the detector, and wherein the value of the electrical bias is at least partially based on the first configuration of the charged particle column.