A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a third deflector located between the second deflector and the objective lens assembly and disposed in an opening delimited and circumscribed by the pole piece, and each of the first deflector, the second deflector and the third deflector is an electrostatic deflector.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a third deflector located between the second deflector and the objective lens assembly and disposed in an opening delimited and circumscribed by the pole piece, and each of the first deflector, the second deflector and the third deflector is an electrostatic deflector.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

A compact two-dimensional (2D) scanning magnet for scanning ion beams is provided. The compact 2D scanning magnet may include an outer double-helix coil and an inner double-helix coil that is disposed within the outer double-helix coil and is rotated about an axis relative to the outer double-helix coil. The outer double-helix coil may include a first outer coil configured to receive an input electrical current through the first outer coil in a first direction, and a second outer coil configured to receive the input electrical current through the second outer coil in a second direction. The inner double-helix coil may include a first inner coil configured to receive a second input electrical current through the first inner coil in the first direction, and a second inner coil configured to receive the second input electrical current through the second inner coil in the second direction.

A compact two-dimensional (2D) scanning magnet for scanning ion beams is provided. The compact 2D scanning magnet may include an outer double-helix coil and an inner double-helix coil that is disposed within the outer double-helix coil and is rotated about an axis relative to the outer double-helix coil. The outer double-helix coil may include a first outer coil configured to receive an input electrical current through the first outer coil in a first direction, and a second outer coil configured to receive the input electrical current through the second outer coil in a second direction. The inner double-helix coil may include a first inner coil configured to receive a second input electrical current through the first inner coil in the first direction, and a second inner coil configured to receive the second input electrical current through the second inner coil in the second direction.

This charged particle beam device comprises: a charged particle beam source that generates charged particle beams; an objective lens in which coil current is inputted to focus the charged particle beams on a sample; a control unit that controls the coil current; a hysteresis characteristics storage unit that stores hysteresis characteristics information of the objective lens; a history information storage unit that stores history information relating to the coil current; and an estimating unit that estimates the magnetic field generated by the objective lens based on the coil current, the history information, and the hysteresis characteristic information, and has a magnetic field correction unit that, when the absolute value of the change amount of the coil current is greater than a prescribed value, further adds to the magnetic field estimated by the estimating unit a correction value according to the coil current and its change amount, correcting the magnetic field generated by the objective lens.

This charged particle beam device comprises: a charged particle beam source that generates charged particle beams; an objective lens in which coil current is inputted to focus the charged particle beams on a sample; a control unit that controls the coil current; a hysteresis characteristics storage unit that stores hysteresis characteristics information of the objective lens; a history information storage unit that stores history information relating to the coil current; and an estimating unit that estimates the magnetic field generated by the objective lens based on the coil current, the history information, and the hysteresis characteristic information, and has a magnetic field correction unit that, when the absolute value of the change amount of the coil current is greater than a prescribed value, further adds to the magnetic field estimated by the estimating unit a correction value according to the coil current and its change amount, correcting the magnetic field generated by the objective lens.