Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.

To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.

The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.

A particle beam system includes a multi-source system. The multi-source system comprises an electron emitter array as a particle multi-source. The inhomogeneous emission characteristics of the various emitters in this multi-source system are correctable, or pre-correctable for subsequent particle-optical imaging, via particle-optical components that are producible via MEMS technology. A beam current of the individual particle beams is adjustable in the multi-source system.

A particle beam system includes a multi-source system. The multi-source system comprises an electron emitter array as a particle multi-source. The inhomogeneous emission characteristics of the various emitters in this multi-source system are correctable, or pre-correctable for subsequent particle-optical imaging, via particle-optical components that are producible via MEMS technology. A beam current of the individual particle beams is adjustable in the multi-source system.

For an electron beam system, a Wien filter is in the path of the electron beam between a transfer lens and a stage. The system includes a ground electrode between the Wien filter and the stage, a charge control plate between the ground electrode and the stage, and an acceleration electrode between the ground electrode and the charge control plate. The system can be magnetic or electrostatic.

For an electron beam system, a Wien filter is in the path of the electron beam between a transfer lens and a stage. The system includes a ground electrode between the Wien filter and the stage, a charge control plate between the ground electrode and the stage, and an acceleration electrode between the ground electrode and the charge control plate. The system can be magnetic or electrostatic.

An apparatus comprising a beam emitter to emit a beam comprising electrons, ions or laser-light photons toward a target substrate. A motion sensor to detect mechanical vibrations of the target substrate. The motion sensor is mechanically coupled to the target substrate, a processor coupled to an output of the motion sensor. The processor is to generate a vibration correction signal proportional to the mechanical vibrations detected by the motion sensor, and beam steering optics coupled to the processor. The beam steering optics are to deflect the beam according to the vibration correction signal to compensate for the mechanical vibrations of the target substrate.

An apparatus comprising a beam emitter to emit a beam comprising electrons, ions or laser-light photons toward a target substrate. A motion sensor to detect mechanical vibrations of the target substrate. The motion sensor is mechanically coupled to the target substrate, a processor coupled to an output of the motion sensor. The processor is to generate a vibration correction signal proportional to the mechanical vibrations detected by the motion sensor, and beam steering optics coupled to the processor. The beam steering optics are to deflect the beam according to the vibration correction signal to compensate for the mechanical vibrations of the target substrate.