An apparatus comprising a set of pixels configured to shape a beamlet approaching the set of pixels and a set of pixel control members respectively associated with each of the set of pixels, each pixel control member being arranged and configured to apply a signal to the associated pixel for shaping the beamlet.

An apparatus comprising a set of pixels configured to shape a beamlet approaching the set of pixels and a set of pixel control members respectively associated with each of the set of pixels, each pixel control member being arranged and configured to apply a signal to the associated pixel for shaping the beamlet.

The disclosure relates to apparatus and methods for manipulating charged particle beams. In one arrangement, an aperture assembly is provided that comprises a first aperture body and a second aperture body. Apertures in the first aperture body are aligned with apertures in the second aperture body. The alignment allows charged particle beams to pass through the aperture assembly. The first aperture body comprises a first electrode system for applying an electrical potential to an aperture perimeter surface of each aperture in the first aperture body. The first electrode system comprises a plurality of electrodes. Each electrode is electrically isolated from each other electrode and electrically connected simultaneously to the aperture perimeter surfaces of a different one of a plurality of groups of the apertures in the first aperture body.

The disclosure relates to apparatus and methods for manipulating charged particle beams. In one arrangement, an aperture assembly is provided that comprises a first aperture body and a second aperture body. Apertures in the first aperture body are aligned with apertures in the second aperture body. The alignment allows charged particle beams to pass through the aperture assembly. The first aperture body comprises a first electrode system for applying an electrical potential to an aperture perimeter surface of each aperture in the first aperture body. The first electrode system comprises a plurality of electrodes. Each electrode is electrically isolated from each other electrode and electrically connected simultaneously to the aperture perimeter surfaces of a different one of a plurality of groups of the apertures in the first aperture body.

The disclosure relates to charged-particle multi-beam columns and multi-beam column arrays. In one arrangement, a sub-beam defining aperture array forms sub-beams from a beam of charged particles. A collimator array collimates the sub-beams An objective lens array projects the collimated sub-beams onto a sample. A detector detects charged particles emitted from the sample. Each collimator is directly adjacent to one of the objective lenses. The detector is provided in a plane down-beam from the sub-beam defining aperture array.

The disclosure relates to charged-particle multi-beam columns and multi-beam column arrays. In one arrangement, a sub-beam defining aperture array forms sub-beams from a beam of charged particles. A collimator array collimates the sub-beams An objective lens array projects the collimated sub-beams onto a sample. A detector detects charged particles emitted from the sample. Each collimator is directly adjacent to one of the objective lenses. The detector is provided in a plane down-beam from the sub-beam defining aperture array.

A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a third deflector located between the second deflector and the objective lens assembly and disposed in an opening delimited and circumscribed by the pole piece, and each of the first deflector, the second deflector and the third deflector is an electrostatic deflector.

A method of reducing aberration comprises separating charged particles of a beam based on energy of the charged particles to form beamlets, each of the beamlets configured to include charged particles at a central energy level; and deflecting the beamlets so that beamlets having different central energy levels are deflected differently. An aberration corrector comprises a dispersive element configured to cause constituent parts of a beam (e.g. a charged particle beam) to spread apart based on energy; an aperture array configured to form beamlets from the spread apart beam; and a deflector array configured to deflect the beamlets differently based on central energy levels of particles that form the beamlets.

A method of reducing aberration comprises separating charged particles of a beam based on energy of the charged particles to form beamlets, each of the beamlets configured to include charged particles at a central energy level; and deflecting the beamlets so that beamlets having different central energy levels are deflected differently. An aberration corrector comprises a dispersive element configured to cause constituent parts of a beam (e.g. a charged particle beam) to spread apart based on energy; an aperture array configured to form beamlets from the spread apart beam; and a deflector array configured to deflect the beamlets differently based on central energy levels of particles that form the beamlets.