Using a segmented detector having detection regions enables an observation of atoms in a specimen with a high contrast. A scanning transmission electron microscope system 100 scans an electron beam EB over a specimen S, uses a segmented detector 105 having detection regions disposed in a bright-field area to detect electrons transmitted through and scattered from the specimen S for each detection region, generates segmented images based on results of detecting the electrons in the detection regions, and applies filters determined based on a signal-to-noise ratio to the segmented images to generate a reconstructed image. The signal-to-noise ratio is proportional to an absolute value of a total phase contrast transfer function normalized by a noise level, the total phase contrast transfer function being defined by product-sum operation of complex phase contrast transfer functions and weight coefficients for the detection regions. The filters are determined based on the weight coefficients that yield a maximum of the signal-to-noise ratio.

A reference image is generated based on an illumination condition and element information of a specimen. The reference image includes a figure indicating a characteristic X-ray generation range, a numerical value indicating a characteristic X-ray generation depth, or the like. The reference image changes with a change of an accelerating voltage, a tilt angle, or an element forming the specimen. The reference image may include a figure indicating a landing electron scattering range, a figure indicating a back-scattered electron generation range, or the like.

A method and a system are for sparse sampling utilizing a programmatically randomized signal for modulating a carrier signal. The system includes a compound sparse sampling pattern generator that generates at least one primary carrier signal, and at least one secondary signal. The at least one secondary signal modulates the at least one primary signal in a randomized fashion.

The purpose of the present invention is to provide a pattern measurement apparatus that appropriately assesses patterns formed by patterning methods for forming patterns that do not exist on photomasks. In order to achieve this purpose, the present invention provides a pattern measurement apparatus comprising a processor that measures the dimensions of patterns formed on a sample by using data acquired by irradiating the sample with a beam, wherein the processor extracts pattern coordinate information on the basis of the data acquired by irradiating the sample with a beam, and uses the coordinate information to generate measurement reference data used when performing dimension measurements of the pattern.

A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

Computer-implemented methods for controlling a charged particle microscopy system include estimating a drift of a stage of the charged particle microscopy system based on an image sequence, and automatically adjusting a stage settling wait duration based on the drift estimate. Charged particle microscopy systems include an imaging system, a movement stage, and a processor and memory configured with computer-executable instructions that, when executed, cause the processor to estimate a stage settling duration of the movement stage based on an image sequence obtained with the imaging system, and automatically adjust a stage settling wait duration for the movement stage based on the stage settling duration.

Disclosed herein are scientific instrument support systems, as well as related methods, computing devices, and computer-readable media. For example, in some embodiments, a method for determining sample location and associated stage coordinates by a microscope at least comprises acquiring, with a navigation camera, an image of a plurality of samples loaded on a fixture, the image being of low resolution at a field of view that includes the fixture and all samples of the plurality of samples, analyzing the image with a trained model to identify the plurality of samples, based on the analysis, associating each sample with a location on the fixture, based on the location on the fixture of each sample, associating separate stage coordinate information with each sample of the plurality of samples loaded on the fixture, and translating a stage holding the fixture to first stage coordinates based on the associated stage coordinate information of a first sample of the plurality of samples.

Methods and apparatuses are disclosed herein for parameter estimation for metrology. An example method at least includes optimizing, using a parameter estimation network, a parameter set to fit a feature in an image based on one or more models of the feature, the parameter set defining the one or more models, and providing metrology data of the feature in the image based on the optimized parameter set.

An inspection tool comprises an imaging system configured to image a portion of a semiconductor substrate. The inspection tool may further comprise an image analysis system configured to obtain an image of a structure on the semiconductor substrate from the imaging system, encode the image of the structure into a latent space thereby forming a first encoding. the image analysis system may subtract an artifact vector, representative of an artifact in the image, from the encoding thereby forming a second encoding; and decode the second encoding to obtain a decoded image.

The invention provides an observation system capable of observing a formation position of a target shape that cannot be directly irradiated with an electron beam. The observation system includes an electron microscope and a computer. The electron microscope is configured to irradiate, with an electron beam, a first surface position on a specimen, which is different from a formation position of a target shape on the specimen, detect predetermined electrons that are scattered in the specimen from the first surface position and that escape from the formation position of the target shape to an outside of the specimen, and output the predetermined electrons as a detection signal. The computer is configured to output one or more values related to the target shape based on the detection signal.