Disclosed among other aspects is a power supply such as may be used in a charged particle inspection system. The power supply includes a direct current source such as a programmable linear current source connected to a controlled voltage source where the control signal for the controlled voltage source is derived from a measured voltage drop across the direct current source.

Provided is a protective material ring in which a plurality of silicon members are joined. A protective material ring is to be installed in a treatment chamber of a substrate treatment apparatus performing plasma treatment on a substrate, and the substrate is accommodated in the treatment chamber. The protective material ring includes: three or more silicon members; and a joining part joining the silicon members. The joining part contains boron oxide.

A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two, preferably more than two, power output ports each for connection to one of the plasma process chambers, and a controller configured to control the power converter to deliver the bipolar output power to the power output ports, using one or more control parameters selected from a list comprising: power, voltage, current, excitation frequency, and threshold for protective measures, such that at least one of the control parameters at a first power output port is different from the corresponding control parameter at a different power output port.

Some embodiments include a pulsing power supply comprising a power supply and a transformer comprising: a transformer core; a primary winding wrapped around a portion of the transformer core, the primary winding having a first lead and a second lead; and a secondary winding wrapped around a portion of the transformer core. The pulsing power supply may also include a first switch electrically connected with the first lead of the primary winding and the power supply; and a second switch electrically connected with the second lead of the primary winding and the power supply, wherein the first switch and the second switch are opened and closed at different time intervals. The pulsing power supply may also include a pulsing output electrically coupled with the secondary winding of the transformer that outputs pulses having a voltage greater than about 2 kV and with pulse frequencies greater than 1 kHz.

A method and an apparatus for generating a particle wave carrying an electric charge is provided. The method comprises: on the basis of waveform information pre-stored in a waveform storage module, generating a corresponding digital waveform signal; the waveform information comprising amplitude and phase; on the basis of a digital-to-analog conversion module connected to the waveform storage module, converting the digital waveform signal having a pre-set phase into an analog waveform signal; on the basis of a power amplification module connected to the digital-to-analog conversion module, performing power amplification on the analog waveform signal; on the basis of a high-voltage generator connected to the power amplification module, performing high-voltage amplification on the power signal of the analog waveform signal; and by means of a quasi-continuous emission electrode connected to the high-voltage generator, emitting a charged particle wave on the basis of the analog waveform voltage signal.

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

In a high voltage, variable frequency radiation generation system, a carrier signal supplied to a primary coil of a transformer is varied, e.g., turned ON and OFF at variable frequencies. The ON duration and/or the average amplitude of the carrier signal may also be varied. Moreover, the carrier signal may be modulated using an audio signal. The parameters to control the variation of the carrier can be provided as a recipe via a software application. A server can provide different types of apps providing different control features. The server may also collect user characteristic data and recipe usage data, and may facilitate exchange of these data and may recommend recipes based on a particular user characteristic.

A plasma processing apparatus includes a container; a stage disposed in the container and including an electrode; a plasma source that generates plasma in the container; a bias power supply that periodically supplies a pulsed negative DC voltage to the electrode; an edge ring disposed to surround a substrate placed on the stage; and a DC power supply that supplies a DC voltage to the edge ring. The DC power supply supplies a first DC voltage in a first time period when the pulsed negative DC voltage is not supplied to the electrode, and supplies a second DC voltage in a second time period when the pulsed negative DC voltage is supplied to the electrode.

A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a current sensor aligned to a central axis of the RF pipe carrying the RF signal. A sensor casing is disposed around the RF pipe, where the sensor casing includes a conductive material connected to the outer conductor of the RF pipe. A gallery is disposed within the sensor casing and outside the outer conductor of the RF pipe, where the current sensor is disposed in the gallery. A slit in the outer conductor of the RF pipe exposes the current sensor to a magnetic field due to the current of the RF signal in the inner conductor of the RF pipe.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.