A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

System and methods are described for directly measuring mechanical properties of a sample while concurrently imaging the sample using a scanning beam microscope (e.g., a scanning electron microscope (SEM)).

System and methods are described for directly measuring mechanical properties of a sample while concurrently imaging the sample using a scanning beam microscope (e.g., a scanning electron microscope (SEM)).

A scanning transmission electron microscope that scans a specimen with an electron probe to acquire an image. The scanning transmission electron microscope includes: an optical system which includes a condenser lens and an objective lens; an imaging device which is arranged on a back focal plane or a plane conjugate to the back focal plane of the objective lens and which is capable of photographing a Ronchigram; and a control unit which performs adjustment of the optical system. The control unit is configured or programed to: acquire an image of a change in a Ronchigram that is attributable to a change in a relative positional relationship between the specimen and the electron probe; and determine a center of the Ronchigram based on the image of the change in the Ronchigram.

A GUI (graphical user interface) image includes an input portion and a reference image. The reference image includes a plan diagram and numerical value information. The plan diagram includes a figure indicating an electron penetration range, a figure indicating a characteristic X-ray generation range, and a figure indicating a back-scattered electron generation range. The numerical value information includes numerical values indicating sizes of these ranges.

A UI image includes a reference image, which includes a background image and a schematic image. The background image corresponds to a cross section of a specimen having a multilayer structure. The schematic image includes a figure indicating an electron penetration depth, a figure indicating a characteristic X-ray generation depth, and a figure indicating a back-scattered electron generation depth. These figures are displayed in an overlapping manner or in parallel to each other.

System and methods are described for directly measuring mechanical properties of a sample while concurrently imaging the sample using a scanning beam microscope (e.g., a scanning electron microscope (SEM)). The system includes a clamping mount configured to hold the sample and a load cell positioned proximal to the clamping mount and configured to provide a direct, real-time measurement of force on the sample end. The system further includes a controllable probe configured to apply a force to the sample. In some embodiments, the sample load cell is tiltably couplable to a sample held by the clamping mount and the controllable probe is moveable between a plurality of different mounting positions relative to the load cell.

System and methods are described for directly measuring mechanical properties of a sample while concurrently imaging the sample using a scanning beam microscope (e.g., a scanning electron microscope (SEM)). The system includes a clamping mount configured to hold the sample and a load cell positioned proximal to the clamping mount and configured to provide a direct, real-time measurement of force on the sample end. The system further includes a controllable probe configured to apply a force to the sample. In some embodiments, the sample load cell is tiltably couplable to a sample held by the clamping mount and the controllable probe is moveable between a plurality of different mounting positions relative to the load cell.

An average mass, an average density, and an average atomic number for a plurality of elements which form a specimen are calculated. A characteristic X-ray generation depth is calculated based on the average values and a minimum excitation energy of an element of interest. When an illumination condition is set, a reference image including a figure indicating a characteristic X-ray generation range, a numerical value indicating the characteristic X-ray generation depth, or the like, is displayed.

The present invention makes it possible to analyze trace carbon in a sample without the effects of contamination. In an electron probe microanalyzer, a liquid nitrogen trap and a plasma or oxygen radical generator are jointly used as a means for suppressing contamination, and two or more carbon detection units for detecting characteristic x-rays of carbon in the sample are provided.